A Highly Power Efficient 2×3 PIN-Diode-Based Intercoupled THz Radiating Array at 425GHz with 18.1dBm EIRP in 90nm SiGe BiCMOS

📋 论文概要

本文提出了一种基于PIN二极管的2×3互耦太赫兹辐射阵列，在425GHz实现了18.1dBm的等效全向辐射功率（EIRP），具有高功率效率，解决了硅基太赫兹生成效率低的问题。

💡 主要创新点

• 采用PIN二极管作为辐射单元，利用其强非线性实现高效谐波生成。
• 提出互耦阵列结构，通过单元间耦合增强辐射功率和效率。
• 在90nm SiGe BiCMOS工艺中实现了425GHz的紧凑型阵列，达到18.1dBm EIRP。

🏷 关键词

📄 原文摘要

Efficient THz generation in silicon technologies has been of great interest over the recent years, as it enables an integrated low-cost solution for sensing, radar, communication, and spectroscopy [1]. Due to the limited fT/fmax of transistors, direct THz generation using a fundamental oscillator is not feasible; therefore, various approaches have been developed based on harmonic extraction and the frequency multiplication of a fundamental oscillator [2]. In these techniques, the nonlinearity of transistors is utilized to generate higher harmonics from a fundamental oscillator or frequency-multiplier cells; however, such systems have a poor efficiency and low radiated power due to device limitations. To compensate for the low generated power, a coherent array scheme is preferred to increase EIRP and radiated power. Adjusting the phase and locking the frequency of elements for coherent operation are important factors in array architectures,

👥 作者与机构

Sam Razavian, Aydin Babakhani

University of California, Los Angeles, CA