⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种基于晶体氧化物半导体的3D存储体系统,用于端点人工智能,通过堆叠OS存储器和CMOS电路实现上下文切换和功耗降低。与传统的SRAM芯片相比,该方案在推理任务中显著降低了待机功耗。
Masashi Fujita1, Munehiro Kozuma1, Yoshinori Ando1, Yoshiyuki Kurokawa1, Toru Nakura2, Shunpei Yamazaki1 The effect of power reduction when performing context switching and PG is compared between an OS/Si chip and a Si (SRAM) chip, as shown in Fig. 13.1.4. The OS/Si chip is fabricated by stacking only one layer of OS memory on a CMOS circuit. The Si chip does not use OS and the ACC consists of PEs and SRAM. Since the SRAM is volatile memory, the Si chip reduces standby power by clock gating (CG). The power of these chips is estimated under intermittent operations in which the inference is performed while switching two NNs, and then, PG (CG) is performed. The OS/Si and Si chips (estimated based on the SRAM generator) can only retain data for one NN in the ACC memory. Thus, every inference requires weight data rewriting. The stacked OS/OS/Si process enables instant context switching and results in low power by allocating the time for PG. At room
Yuto Yakubo1, Kazuma Furutani1, Kouhei Toyotaka1, Haruki Katagiri1,