A Self-Programming PUF Harvesting the High-Energy Plasma During Fabrication

📋 论文概要

本文发现半导体制造过程中的高能等离子体（RIE）可作为能量源，提出一种自编程物理不可克隆函数（PUF）方案，利用制造阶段已有的等离子体能量实现PUF的自编程，无需额外电源。

💡 主要创新点

• 首次利用半导体制造过程中已有的高能等离子体作为能量源，实现环境能量收集新范式。
• 提出自编程PUF架构，利用等离子体能量在芯片制造阶段自动完成PUF编程，无需后处理或外部编程设备。

🏷 关键词

📄 原文摘要

Ambient energy harvesting exploits existing energy for powering ICs and has been expanding operation space and application field of IC electronics. If an existing high energy source yet unexploited by ICs could be found, a new IC functionality could emerge. As the unexploited existing high energy source, this paper discovered highenergy plasma in a semiconductor fabrication process (Fig. 13.4.1). Plasma-based Reactive Ion Etching (RIE) is one mainstream etching instrument in the semiconductor fabrication. The high-energy plasma ions are used to process silicon and metal layers but, as well-known as an antenna effect, the ion charging current during the metal layer process is strong enough to breakdown a transistor gate oxide. By harvesting stable power from this high-energy etching plasma, a circuit operating during its fabrication process can be realized, namely Fetal-Movement Circuit (FMC).

👥 作者与机构

Kotaro Naruse, Takayuki Ueda, Jun Shiomi, Yoshihiro Midoh, Noriyuki Miura

Osaka University, Suita, Japan