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ISSCC 2023Session 2 · DIGITAL PROCESSORSDigital Processors4nm FinFET

A 5G Mobile Gaming-Centric SoC with High-Performance Thermal Management in 4nm FinFET

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📋 论文概要

本文介绍了一款面向5G移动游戏、采用4nm FinFET工艺的SoC,重点解决了高性能计算带来的热管理挑战,以在游戏过程中维持性能。

💡 主要创新点

工艺节点
4nm FinFET
重要性
发表年份
ISSCC 2023

🏷 关键词

5G移动游戏SoC热管理4nm FinFET

📄 原文摘要

Jia-Ming Chen, Eric Jia-Wei Fang, Sung S.-Y. Hsueh, Jack Ciao, Barry Chen, Chuck Chang, Ping Kao, Ericbill Wang, Harry H. Chen, Hugh Mair, Shih-Arn Hwang MediaTek, Hsinchu, Taiwan In recent years, mobile gaming has grown rapidly to overtake both console and PC gaming markets globally. Thus far, modern smartphones have been powerful enough to support gaming requirements. However, demands of high-performance and computing power cause thermal management challenges to sustain performance during gaming. As shown in Fig. 2.2.1, frequency upgrades did not bring commensurate benchmark improvements due to the thermal wall. This work presents a high-performance fully integrated 5G flagship mobile gaming-centric SoC in a 4nm FinFET process. The SoC consists of an octa-core tri-gear 3.35/3.2/1.8GHz CPU and a deca-core 955MHz GPU to provide a high-quality gaming experience. To maintain high-performance operation under

👥 作者与机构

Bo-Jr Huang, Alfred Tsai, Lear Hsieh, Kathleen Chang, C.-J. Tsai,

分类:Digital Processors · 年份:ISSCC 2023