⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出了一种在65nm CMOS工艺中实现的0.64-0.69THz波束可调相干源，解决了硅基工艺在太赫兹频段信号产生功率低的问题。通过耦合振荡器-辐射器阵列架构，实现了9.1dBm辐射功率和30.8dBm无透镜EIRP，展示了中太赫兹频段的高效信号生成能力。
Si-based compact terahertz (THz) integrated systems have been successfully demonstrated in imaging, spectroscopy, high-speed data transmission, and radar applications in the low-THz band [1]. A THz signal source is indispensable for applications in the mid-THz band. However, this band is beyond the fmax of most silicon-based technologies, making high-power signal generation extremely challenging. Coupled oscillator-radiator array architecture is prevalent for coherent THz signal generation and radiation [2-5]. The radiation beam narrows as the array size increases, implying a double boost in EIRP. However, most reported arrays are limited in size. Thus, the output power is small, and high EIRPs are realized by the expensive and bulky external silicon lenses [3-5]. A large array reported in [4] is 6×7 in size but only radiates -10.9dBm at 1.01THz. Increasing the array size is not trivial. An on-chip patch-antenna-based source [2] is
Liang Gao, Chi Hou Chan
City University of Hong Kong, Hong Kong, China