A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power

📋 论文概要

该论文提出了一种200-350GHz SiGe BiCMOS频率倍频器，采用基于槽线的模式去耦谐波调谐技术，实现了超宽带太赫兹信号生成。该技术有效解决了硅基太赫兹生成中带宽与输出功率的折中问题。

💡 主要创新点

• 提出基于槽线的模式去耦谐波调谐技术，通过优化谐波阻抗实现宽频带和高输出功率。
• 在SiGe BiCMOS工艺上实现了200-350GHz的超宽带倍频器，覆盖了太赫兹频段的关键应用频段。

🏷 关键词

📄 原文摘要

Sanechips Technology, Shenzhen, China 1 2 Silicon-based ultra-broadband terahertz (THz) generation has attracted growing interest in recent years, as it provides a low-cost and high-integration solution for high-resolution radar, hyperspectral imaging, and rotational spectroscopy systems [1]. However, direct THz-signal generation with an extensive bandwidth and high output power (Pout) remains challenging due to the degraded tuning range of varactors and the limited fT/fmax of transistors. A practical alternative is frequency multiplication, which depends on the nonlinearity of devices and extracts the output high-order harmonics, thereby extending the bandwidth of the input signal. Prior broadband THz-frequency multipliers, whether employing distributed architecture or not, were merely based on the broadband input fundamental and output harmonic matching [1-5]. Part of them have considered the

👥 作者与机构

Shuyang Li1, Xingcun Li1,2, Huibo Wu1, Wenhua Chen1

Tsinghua University, Beijing, China