The Promise of 2-D Materials for Scaled Digital and Analog Applications

📋 论文概要

本文探讨了二维（2-D）材料在缩放数字和模拟应用中的潜力，认为其可能取代硅成为缩放MOSFET技术中最有前景的候选材料。论文回顾了2D材料的优势，如高载流子迁移率、天然丰富性等，并讨论了其在未来集成电路中的应用前景。

💡 主要创新点

• 提出2D材料作为硅的替代品，用于缩放MOSFET技术，克服传统硅在进一步缩放中的局限性。
• 分析了2D材料在数字和模拟应用中的独特优势，如高迁移率和良好的界面特性。

🏷 关键词

📄 原文摘要

Quentin Smets, Aryan Afzalian, Rutger Duflou, Xiangyu Wu, Gioele Mirabelli, Rongmei Chen, Inge Asselberghs, Gouri Sankar Kar imec, Leuven, Belgium Until the early 2000s, two-dimensional (2-D) materials were presumed to be fundamentally unstable; now, they might be the most promising candidates to replace silicon in scaled MOSFET technology [1]. Throughout the scaling roadmap, silicon has been the channel material of choice thanks to its high carrier mobilities, natural ubiquity, good quality native oxide and well-controllable crystallinity. This has remained true with the introduction of the FinFET architecture, which counteracts short-channel effects (SCE) by partially enveloping the channel with the gate. For gate lengths (LG) below 20nm, however, even more disruptive architectures are under investigation in which the channel consists of a stack of wide and thin “nanosheets” surrounded by the gate on all sides

👥 作者与机构

Devin Verreck, Piet Wambacq, Maarten Van de Put, Zubair Ahmed,