A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers

📋 论文概要

本文提出了一款超过300层、1Tb容量、3b/cell的3D-NAND闪存，实现了194MB/s的写入吞吐量，解决了高密度存储下的性能瓶颈问题。

💡 主要创新点

• 通过超过300层的堆叠技术，实现了1Tb的高容量3D-NAND闪存，突破密度限制。
• 采用3b/cell（TLC）架构并优化电路，达到194MB/s的高写入吞吐量，显著提升性能。

🏷 关键词

📄 原文摘要

Kangwook Jo, Yujong Noh, Hyeoncheon Seol, Hyunsoo Lee, Jaehyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonguk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha SK hynix Semiconductor, Icheon, Korea As data produced by multimedia explodes and demand for data storage increases, the most important topics for the NAND-Flash memory field are continuous performance improvements and cost/bit reduction. To improve performance, features to improve the quality of service (QoS) as well as the read/write performance [1] are required. To reduce the cost/bit, the number of stacked layers needs to increase, while the pitch between stacked layers decreases. It is necessary to manage the increasing WL resistance

👥 作者与机构

Byungryul Kim, Seungpil Lee, Beomseok Hah, Kangwoo Park, Yongsoon Park,