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ISSCC 2023Session 28 · HIGH-DENSITY MEMORIES AND HIGH-SPEED INTERFACERF & Wireless4nm

A 4nm 16Gb/s/pin Single-Ended PAM4 Parallel Transceiver with Switching-Jitter Compensation and Transmitter Optimization

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📋 论文概要

该论文提出了一种采用4nm工艺的16Gb/s/pin单端PAM4并行收发器,通过开关抖动补偿和发射机优化解决了PAM4信令中的SNR退化和开关抖动问题,实现了高带宽和高能效的数据传输。

💡 主要创新点

核心指标
16Gb/s/pin
工艺节点
4nm
重要性
发表年份
ISSCC 2023

🏷 关键词

PAM4开关抖动补偿并行收发器4nm工艺高速接口

📄 原文摘要

communication, deep learning, advanced driverassistance systems (ADAS), and extended reality (XR), have fueled demand for increased computing power and per-pin interface bandwidth. Recently, four-level pulse-amplitude modulation (PAM4) has been adopted as a solution [1-3]: the throughput is doubled without increasing the baud (Nyquist) rate. Compared to a conventional non-return-tozero (NRZ) signaling, PAM4 requires more design effort: varying from the precise design of I/O circuits to the off-chip characterization. This is in part due to SNR degradation and an increased switching jitter (SWJ). For a 1st-order low-pass filter with a Nyquistfrequency cutoff, SWJ is 35% for the middle eye and 51.2% for the top and bottom eyes

👥 作者与机构

Jahoon Jin, Soo-Min Lee, Kyunghwan Min, Sodam Ju, Jihoon Lim,

Hyunsu Chae, Kwonwoo Kang, Yunji Hong, Yeongcheol Jeong, Sang-Ho Kim, Jongwoo Lee, Joonsuk Kim Samsung Electronics, Hwaseong, Korea Ever-growing applications, such as 5G

分类:RF & Wireless · 年份:ISSCC 2023