A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR 179.4dB-FOMSNDR 2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS

📋 论文概要

本文提出了一种用于可穿戴生物电位读取的1V电源、1.85Vpp输入范围、1kHz带宽的二阶噪声整形SAR ADC，实现了181.9dB的FOMDR和179.4dB的FOMSNDR，解决了传统ADC在低电压下输入范围不足和能效低的问题。

💡 主要创新点

• 采用增强输入范围技术，在1V电源下实现1.85Vpp线性输入范围，避免运动/刺激伪影导致的饱和。
• 使用二阶噪声整形结构，在1kHz带宽内达到极低输入参考噪声（<5µVrms）和高能效（FOMSNDR>179dB）。

🏷 关键词

📄 原文摘要

Gain Kim, Jong-Hyeok Yoon, Arup K. George, Junghyup Lee Daegu Gyeongbuk Institute of Science and Technology, Daegu, Korea Wearable devices rely on accurately read bio-potentials such as ECG, EEG, EMG, and EOG (ExG) to track health. Specifications-wise, such a system requires an input-referrednoise (IRN) <5µVrms, input impedance (ZIN) >10MΩ and BW ~1kHz to readout ExG signals accurately [1]. In addition, a linear-input-range (IR) >1Vpp is desirable to avoid saturation when motion/stimulation artifacts are present. Furthermore, the above has to be achieved energy-efficiently (FOMSNDR >175dB) and at power envelopes <10µW to reduce battery recharge-cycles. CTDSM architectures (Fig. 32.4.1 top-left) are attractive for ExG recording due to high ZIN, low power levels, and the absence of aliased noise [1]. However, for a given supply voltage, the IR of CTDSMs is limited by the IR of its integrators and quantizers. Thus,

👥 作者与机构

Geunha Kim, Sehwan Lee, Taeryoung Seol, Seungyeob Baik, Yeonjae Shin,