⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文在16nm工艺上实现了32Mb嵌入式STT-MRAM，具有6ns读访问时间、1M次写耐久性和150°C下20年数据保持能力，并提出了MTJ-OTP解决方案，解决了汽车MCU对高可靠非易失性存储的需求。
Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Hon-Jarn Lin, Yen-An Chang, Cheng-Han Lu, Yu-Lin Chen, Chieh-Pu Lo, Chung-Chieh Chen, Cheng-Hsiung Kuo, Tan-Li Chou, Chia-Yu Wang, J. J. Wu, Roger Wang, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang TSMC, Hsinchu, Taiwan Embedded non-volatile memory (eNVM) is an essential element for microcontrollers (MCUs) used in automotive applications. As the automotive market transitions to greater electrification and autonomy, we are seeing MCU growth in the car: including integration to simplify system design, an electrical and electronic (E/E) architectural evolution to domain/zone control, and over-the-air (OTA) updates beyond 128Mb eNVM densities. To support this transition technology nodes are migrating from 55/40nm to 28/16nm. In addition, traditional charge-based embedded Flash will be replaced by Back-end-ofline (BEOL) memories: such as STT-MRAM [1-3], PCRAM [4], and RRAM. Of these
Time, a 1M-Cycle Write Endurance, 20-Year Retention at, 150°C and MTJ-OTP Solutions for Magnetic Immunity