⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一款基于HZO材料的9Mb嵌入式铁电存储器(FeRAM)，采用ECC辅助数据刷新和偏移技术，实现了10^12次循环的耐久性和5/7ns的读写速度。通过生成与温度相关的跟踪电压并动态调整写入电压，有效降低了ECC错误率，提升了存储器的可靠性和性能。
University, Shanghai, China 3 Zhejiang Lab, Hangzhou, China 1 voltage (VT) has a positive coefficient of about +0.085mV/°C. By setting a proper R2:R3 ratio, a tracking voltage (Vtrack) can be generated with an expected relation to the temperature. The driver circuit consists of an amplifier, A2, a refresh switch, and three variable resistors, R4, R5 and R6. By setting R4, R5 and R6, a normal write voltage is generated when no ECC errors are detected, and a larger write voltage is produced when ECC failures occur. Measurement results show that the generated write voltage is in the expected relationship to the temperature. To keep the FeCAP 2·PR > 30%C/cm2, the write voltage is reduced by 43% between -40 – 120°C to alleviate the overdrive voltage on the
Jianguo Yang1, Qing Luo1, Xiaoyong Xue2, Haijun Jiang3, Qiqiao Wu2,
Zhongze Han1, Yue Cao3, Yongkang Han3, Chunmeng Dou1, Hangbing Lv1, Qi Liu2, Ming Liu1,2 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China Fudan