A 0.64µm 4-Photodiode 1.28µm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower

📋 论文概要

本文提出了一种基于4-光电二极管像素结构的50M像素CMOS图像传感器，有效像素尺寸为1.28µm（通过0.64µm的单位像素合并实现）。该传感器通过前端深沟槽隔离技术(FDTI)实现了0.98e-的超低时间噪声和20Ke-的大满阱容量，解决了小像素尺寸下高信噪比与动态范围的矛盾，适用于高端移动设备的多摄像头系统。

💡 主要创新点

• 采用4-光电二极管共享微透镜的像素架构，在0.64µm工艺节点上实现1.28µm有效像素，同时保持高量子效率和低串扰。
• 通过优化前端深沟槽隔离（FDTI）和像素内电荷转移，在极小像素尺寸下实现了亚电子级时间噪声（0.98e-）和大满阱容量（20Ke-）的平衡。

🏷 关键词

📄 原文摘要

Byeongjun Yoo, Jueun Park, Seyoung Kim, June-Mo Koo, Sewon Seo, Hye Ji Shin, Younghwan Choi, Jinwoo Kim, Kyungil Kim, Jae-Hoon Seo, Seunghyun Lim, Taesub Jung, Howoo Park, Sangil Jung, Juhyun Ko, Kyungho Lee, JungChak Ahn, JoonSeo Yim Samsung Electronics, Hwasung, Korea CMOS image sensors (CISs) have received great attention in high-end mobile devices equipped with multiple camera modules to obtain new functionality and advanced image quality. Even though the pixel size has gradually become smaller, this requires a high signal to noise ratio (SNR), and front-side deep-trench isolation (FDTI) is introduced to increase the full-well capacity (FWC) [1]. The FDTI demonstrated in a 1.0"m-pitch pixel showed 60% larger FWC compared to the partial DTI in the same pitch [2]. Nevertheless, FDTI and shallow-trench isolation (STI) limit the area of source-follower (SF) that deteriorate the dark temporal noise (TN) as pixel size decreases. In recent years, the

👥 作者与机构

Hyuncheol Kim, Yun Hyeok Kim, Sanghyuck Moon, Hwanwoong Kim,