An 11.5-to-14.3GHz 192.8dBc/Hz FoM at 1MHz Offset Dual-Core Enhanced Class-F VCO with Common-Mode-Noise Self-Cancellation and Isolation Technique

📋 论文概要

本文提出一种11.5至14.3GHz的双核增强Class-F压控振荡器（VCO），通过共模噪声自消除技术实现了192.8dBc/Hz的FoM（@1MHz偏移），解决了移动设备中对低功耗、小面积和低相位噪声本地振荡器的严格要求。

💡 主要创新点

• 采用双核增强Class-F结构，提高功率效率同时降低相位噪声。
• 引入共模噪声自消除技术，有效抑制共模噪声对相位噪声的影响。

🏷 关键词

📄 原文摘要

stricter requirements on the power consumption, silicon area, and phase noise specifications for local oscillators (LOs) in mobile and portable devices, especially in battery-powered mobile phones, notebook computers, and unmanned aerial vehicles (UAVs) used for mobile base stations. Over the past few decades, intensive research to improve the power efficiency of RF and millimeter-wave oscillators while maintaining required phase-noise characteristic has been carried out. As represented in Fig. 8.1.1, the authors in [1] reported a BiCMOS series-resonance VCO with the lowest phase noise among siliconbased oscillators identified in [1] at the cost of high power consumption (600mW), which is not feasible for energy-efficient applications. In addition to the series resonance technique, the commonly used method to reduce the phase noise is to introduce a high

👥 作者与机构

Qixiu Wu, Wei Deng, Haikun Jia, Hongzhuo Liu, Shiwei Zhang, Zhihua Wang, Baoyong Chi

Tsinghua University, Beijing, China The current 5G and future 6G high-speed mobile-Internet era puts forward