A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate

📋 论文概要

本文提出了一款280层1Tb 4b/cell（QLC）3D-NAND闪存芯片，实现了28.5Gb/mm²的面密度和3.2GB/s的高速IO速率。该设计通过先进的堆叠技术和高速接口电路，解决了高密度存储与高吞吐量之间的平衡问题。

💡 主要创新点

• 实现了280层3D NAND堆叠，显著提升了存储密度。
• 采用4b/cell（QLC）技术，在保持可靠性的同时提高了单位存储容量。
• 设计了3.2GB/s的高速IO接口，满足高带宽应用需求。

🏷 关键词

📄 原文摘要

Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sang-Wan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jaeick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeongwoo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-Yub Lee, Sung-Hoi Hur Samsung Electronics, Hwaseong, Korea 3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every year. In particular, the 4b/cell (QLC) 3D-NAND technology is appearing to be one of the most

👥 作者与机构

Wontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Namhee Lee,