Shigekazu Yamada1, Yoshihiko Kamata1, Tomoko Iwasaki2, Andrea D’alessandro3, Erwin Yu2, Arvind Muralidharan4, Qinge Li2, Henry Nguyen2, Kim-Fung Chan2, Michele Piccardi2, Takaaki Ichikawa1, Jeff Yu2, Guan Wang2, Kwangwon Kim2, Chulbum Kim2, Paolo Mangalindan4, Hojung Yun2, Luca Nubile3, Kapil Verma2, Sushanth Bhushan2, Dheeraj Srinivasan2, Hidehiko Kuge1, Rajesh Subramanian5, Jiro Kishimoto1, Toru Kamijo1, Padma Musunuri2, Chang Siau2, Ramin Ghodsi2 Micron Technology, Tokyo, Japan Micron Technology, San Jose, CA 3 Micron Technology, Avezzano, Italy 4 Micron Technology, Folsom, CA 5 Micron Technology, Hyderabad, India 1 2 With the recent evolution of AI, our digital world, constructed by networks, is advancing rapidly and driving demand for data bandwidth and transfer speed everywhere from mobiles to data centers, regardless of form factor. This paper presents a 1Tb 3b/cell 3DNAND Flash on 2YY Tiers with a 6-plane and 3.6GT/s data-transfer features designed for
Koichi Kawai1, Yuichi Einaga1, Yoko Oikawa1, Yankang He2, Biagio Iorio3,