A 28nm 2.4Mb/mm2 6.9 - 16.3TOPS/mm2 eDRAM-LUT-Based Digital-Computing-in-Memory Macro with In-Memory Encoding and Refreshing

📋 论文概要

该论文提出了一种基于eDRAM-LUT的数字存内计算宏，在28nm工艺下实现了2.4Mb/mm2的存储密度和6.9-16.3TOPS/mm2的计算效率。通过引入内存编码与刷新技术，解决了传统数字存内计算宏在密度和效率上的限制。

💡 主要创新点

• 提出使用eDRAM-LUT结构实现数字存内计算，兼具高密度与高效能
• 设计了在内存中编码与刷新技术，克服eDRAM的刷新开销并提升计算可靠性

🏷 关键词

📄 原文摘要

Yaolei Li1, Zongle Huang1, Zhike Du1, Jinshan Yue2, Xueqing Li1, Huazhong Yang1, Hongyang Jia1, Yongpan Liu1 Tsinghua University, Beijing, China Chinese Academy of Sciences, Beijing, China 1 2 Digital computing-in-memory (DCIM) has showcased its superiority in terms of throughput and accuracy as it scales down toward advanced technology nodes [1-3]. However, the inherent computation scheme imposes a limitation on both density and efficiency on the order of conventional digital logic. More specifically, many DCIM macros behave more like compute cores rather than memory modules where the digital logic dominates the macro area. Previous approximate and analog CIM designs [4-6] relieve the problem of storage density at the cost of lower SNR or throughput, leading to a challenging trade-off between accuracy, area efficiency, and storage density. This work revisits the DCIM design methodology by reconfiguring eDRAM cells into a

👥 作者与机构

Yifan He1, Shupei Fan1, Xuan Li1, Luchang Lei1, Wenbin Jia1, Chen Tang1,