A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation

📋 论文概要

该论文提出了一款1/1.56英寸50M像素的CMOS图像传感器，采用0.5μm间距的四光电二极管结构，并通过前深沟槽隔离技术实现光电二极管间的有效隔离，从而提升动态范围和低光性能。

💡 主要创新点

• 采用四光电二极管（Quad Photodiode）结构，结合前深沟槽隔离（Front Deep Trench Isolation）技术，实现像素间高度隔离，提高满阱容量和动态范围。
• 在50M像素高分辨率下实现0.5μm超小像素间距，同时保持优异的低光图像质量。

🏷 关键词

📄 原文摘要

Taehoon Kim, Seungju Seo, Dongmo Im, You-Na Lee, Jinyong Choi, Sunghyun Yoon, Inho Noh, Jinhyung Kim, Khang June Lee, Hyesung Jung, Jongyoon Shin, Hyuk Hur, Kyoung eun Chang, Incheol Cho, Kieyoung Woo, Byung Seok Moon, Jameyung Kim, Yeonsoo Ahn, Dahee Sim, Sungbong Park, Wook Lee, Kooktae Kim, Chong Kwang Chang, Hansik Yoon, Juha Kim, Sung-In Kim, Hyunchul Kim, Chang-rok Moon, Jaihyuk Song Samsung Semiconductor, Hwaseong, Korea CMOS image sensors (CISs) in high-end mobile devices require wide dynamic range and superior image quality under extremely low light conditions [1]. To implement highresolution sensors that meet market demand, a back-illuminated stacked sensor with front deep-trench isolation (FDTI) has proven to be effective in implementing submicron pixel sensors with excellent full-well capacity (FWC) and signal-to-noise ratio (SNR) [2,3]. However, the main risk of FDTI is deterioration of dark temporal noise (TN) as the

👥 作者与机构

DongHyun Kim, Kwansik Cho, Ho-Chul Ji, Minkyung Kim, Junghye Kim,