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ISSCC 2024Session 7 · ULTRA-HIGH SPEED WIRELINEWireline I/O3nm FinFET CMOS

A 224Gb/s 3pJ/b 40dB Insertion Loss Transceiver in 3nm FinFET CMOS

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📋 论文概要

本文提出了一款采用3nm FinFET CMOS工艺的224Gb/s PAM-4收发器,实现了3pJ/b的能效和40dB的插入损耗补偿,旨在满足数据中心800G/1.6T交换机及AI加速器对更高I/O带宽的需求。

💡 主要创新点

核心指标
224Gb/s PAM-4, 3pJ/b, 40dB insertion loss
工艺节点
3nm FinFET CMOS
重要性
发表年份
ISSCC 2024

🏷 关键词

224Gb/sPAM-4收发器3nm FinFET低功耗插入损耗

📄 原文摘要

Mohammad-Mahdi Mohsenpour1, Marc-Andre LaCroix1, Babak Zamanlooy3, Tom Eeckelaert1, Dmitry Petrov1, Mostafa Haroun1, Carson Dick2, Alif Zaman1, Haitao Mei1, Shahab Moazzeni1, Tahseen Shakir1, Carlos Carvalho1, Howard Huang1, Pratibha Kumari1, Ralph Mason1, Fahmida Brishty2, Ifrah Jaffri2 Synopsys, Ottawa, Canada Synopsys, Mississauga, Canada 3 Synopsys, Markham, Canada 1 2 With datacenters introducing 800G/1.6T switches and emerging artificial intelligence accelerator ASICs demanding higher aggregate I/O bandwidth, 224Gb/s PAM-4 transceivers are expected to supersede today’s dominant 112Gb/s SERDES. Such transceivers must double analog I/O bandwidth to 56GHz while maintaining or exceeding the previous generation’s energy efficiency. This requires substantial improvements in the data and clock paths. With the baud rate doubled, channel losses exceeding 35dB must be addressed by higher order digital equalizers and optional maximum likelihood

👥 作者与机构

Dirk Pfaff1, Muhammad Nummer1, Noman Hai2, Peter Xia2, Kai Ge Yang2,

分类:Wireline I/O · 年份:ISSCC 2024