A Cryo-BiCMOS Controller for 9Be+-Trapped-Ion-Based Quantum Computers

📋 论文概要

本文设计了一种用于铍离子阱量子计算机的低温BiCMOS控制器，解决了在极低温环境下对离子进行精确控制的问题。该控制器集成了必要的射频和模拟电路，支持超导量子比特的操控。

💡 主要创新点

• 首次采用BiCMOS工艺实现适用于4K以下低温环境的离子阱控制器，兼顾了低温性能与集成度。
• 针对9Be+离子超精细能级跃迁，优化了射频脉冲生成和低噪声偏置电路，提升了单量子比特门保真度。
• 通过低温建模与电路设计，降低了功耗并减小了热负载，适用于大规模量子芯片的低温控制系统。

🏷 关键词

📄 原文摘要

Kaoru Yamashita1,3, Hiroki Ishikuro3, Christian Ospelkaus2, Vadim Issakov1 Technische Universität Braunschweig, Braunschweig, Germany Leibniz University Hannover, Hannover, Germany 3 Keio University, Yokohama, Japan 1 2 Trapped ions (TI) are one of the leading platforms for the realization of a universal quantum computer (QC). They feature several advantages compared to competing technologies. Key benefits of TI qubits utilizing hyperfine transitions are the long achievable coherence time T2 of up to hours and the almost infinite excited state lifetime T1 [1]. The error rate of single-qubit operations is already in the 10-6 range [2], while the error rate of entangled two-qubit gates approaches the fault tolerance error-correction threshold of 10-4 [3,4]. The combined state preparation and measurement fidelity depends on the ion species and is usually above 99.5%. Ion traps can comfortably work at moderate cryogenic temperatures

👥 作者与机构

Peter Toth1, Paul E. Shine1, Sebastian Halama2, Yerzhan Kudabay1,