⚡ 本页包含 AI 生成的分析内容,仅供参考
本文提出了一种基于事件驱动的空间缩放神经接口集成电路,采用可重构逆变器结构和输入自适应量化技术,实现了每个输入通道仅10nW的超低功耗,适用于大规模神经电极阵列,解决了神经接口系统功耗过高的问题。
Yu Huang1, Junyu Ma1, Chae Lim1, Lingyun Xu1, Shucheng Gong1, Weian Deng1, Qiaosong Deng1, Jin Che1, Sudip Nag1, Joshua Olorocisimo1, Rhianna Singh1, Yanze Wang1, Jose Sales Filho1, Mandana Mohaved2, Homeira Moradi2, George Eleftheriades1, Taufik Valiante2,3, Roman Genov1 University of Toronto, Toronto, Canada Krembil Neuroscience Center, Toronto, Canada 3 Toronto Western Hospital, Toronto, Canada 1 2 Large-scale neural interface ICs have tens of thousands of electrodes [1-3], enabling a wide range of applications including neural prostheses and therapeutic neuromodulation. However, the human brain contains 86 billion neurons and new frontiers in brain interfacing, such as understanding memory and cognition, will benefit from concurrent access to a million or more of implanted electrodes [4]. Modern microfabrication technologies, including silicon wafer thinning [1], allow for dense co-integration of electrodes and
Jianxiong Xu1, Mustafa Kanchwala1, Mohammad Abdolrazzaghi1, Hanfeng Cai1,