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ISSCC 2025Session 29 · SRAMMemory3nm FinFET

A 3nm FinFET 2.2Gsearch/s 0.305fJ/b TCAM with Dynamically Gated Search Lines for Data-Center ASICs

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文提出了一种面向数据中心ASIC的3nm FinFET TCAM设计,采用动态门控搜索线技术,实现了2.2Gsearch/s的搜索速度和0.305fJ/b的能效,解决了高吞吐量网络分类和转发中功耗与速度的平衡问题。

💡 主要创新点

核心指标
2.2Gsearch/s, 0.305fJ/b
工艺节点
3nm FinFET
重要性
发表年份
ISSCC 2025

🏷 关键词

TCAM数据中心ASIC动态门控搜索线低功耗3nm FinFET

📄 原文摘要

classification and forwarding are fundamental tasks for data-center network (DCN) components, such as switches and routers, which are used to efficiently manage and direct network traffic. Packet classification involves examining packet headers to identify and apply specific policies, such as access control or quality of service; while packet forwarding determines the next hop for each packet based on routing tables. Ternary contentaddressable memory (TCAM) facilitates these two tasks by performing a parallel in-memory search to compare an incoming packet’s header against the rules stored in TCAM. TCAM provides fast parallel-lookup functionality making it an indispensable foundation IP for DCN ASICs. TCAM do have one major cost, the parallel all-entry search is power intensive; this

👥 作者与机构

Sushil Kumar*1, Gajanan Jedhe*1, Chetan Deshpande*1, Agastya Gogoi1,

Phoebe Su2, Kim Soon Jway3, TzeYing Seoh3 MediaTek, San Jose, CA MediaTek, Hsinchu, Taiwan 3 MediaTek, Singapore, Singapore 1 2 *Equally Credited Authors (ECAs) Packet

分类:Memory · 年份:ISSCC 2025