⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出了一款采用WF-Bonding技术的4XX层1Tb 3b/cell 3D-NAND闪存，实现了28Gb/mm2的高存储密度和5.6Gb/s/pin的高速IO接口。解决了高密度、高速度3D NAND闪存的挑战。
Chung-Ho Yu, Hirano Makoto, Yongseok Kwon, Jong-Hoon Park, Ho-Joon Kim, Daein Lee, Donghyun Seo, Byungrok Go, Seoyoon Jeon, Yoonjee Kim, Doo-Hyun Kim, Youngmin Jo, Hyunjun Yoon, Junehong Park, Inmo Kim, Sunghoon Kim, Hokil Lee, Je-Hyeon Yu, Sang-Lok Kim, Hwan-Seok Ku, Jungmin Seo, Jindo Byun, Seung-Hyeon Yun, Kyoungtae Kang, Seung-Beom Kim, Yohan Lee, Yongkyu Lee, Kyunghwa Kang, Han-Jun Lee, Younghwan Ryu, Hyundo Kim , Wontae Kim, Hyeongdo Choi, Juho Jeon, Ansoo Park, Raehyun Song, Jae-Hwan Kim, Jung-Soo Kim, Hwa-Seok Lee, Moo-Kyung Lee, Jae-Ick Son, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Hyuckjoon Kwon, Youngdon Choi, Chiweon Yoon, Seungjae Lee, Kiwhan Song, Sung-Hoi Hur Samsung Electronics, Hwaseong, Korea With the ever-increasing demand for AI and data-intensive applications, 3D NAND Flash memories [1-6] need to achieve both high-density and high-speed IOs. Higher density can
Sang-Soo Park, Jae-Doeg Lyu, Myungjun Kim, Jaeyun Lee, Younsun Song,