⚡ 本页包含 AI 生成的分析内容，仅供参考
本文介绍了一款321层2Tb 4b/cell 3D-NAND闪存，实现了75MB/s的编程吞吐量。该设计通过创新的架构和电路技术，解决了高密度存储下的编程速度瓶颈问题。
Jayoon Goo1, Sangkyu Lee1, Kayoung Cho1, Tei Cho1, Dauni Kim1, Gwan Park1, Yushin Ahn1, Sooyeol Chai1, Gwihan Ko1, Sunyoung Jung1, Eunwoo Jo1, Taehun Park1, Jinhyun Ban1, Cheoljoong Park1, Jae Hyun Park1, Sanghoon Oh1, Sojin Jeong1, Youngjun Kwak1, Kyungsoo Jeong1, Jinyeop Kim1, Minchol Shin1, Eunho Yang1, Taisik Shin1, Youngil Kim1, Jiseong Mun1, Chanyang Ryu1, Huihyeon Park1, Changwan Ha2, Jong Tai Park2, Peng Zhang3, Sooyong Park2, Rezaul Haque3, Hang Tian2, Sunghwa Ok1, Wonbeom Choi1, Junyoun Lim1, Dongkyu Yoon1, Sechun Park1, Wonsun Park1, Kichang Gwon1, Seungpil Lee1, Hwang Huh1, Woopyo Jeong1, Jungdal Choi1 SK hynix, Icheon, Korea SK hynix, San Jose, CA 3 SK hynix, Rancho Cordova, CA 1 2 The rising demand for high-density and high-performance NAND Flash is unprecedented, due to the expansion of data within enterprise SSDs, which fueled by the growth of the artificial intelligence industry. Both sequential- and random-access performance must
Wanik Cho1, Chanhui Jeong1, Jongwoo Kim1, Jongseok Jung1, Keunseon Ahn1,