A 232-to-260GHz CMOS Amplifier-Multiplier Chain with a

📋 论文概要

该论文提出了一种工作在232-260GHz的CMOS放大器-倍频器链，并采用低成本匹配片辅助辐射封装，实现了11.1dBm的总辐射功率，解决了CMOS太赫兹源辐射功率不足的问题。

💡 主要创新点

• 提出放大器-倍频器链结构，在CMOS工艺中实现232-260GHz太赫兹信号产生与放大。
• 采用低成本匹配片辅助辐射封装，显著提升辐射效率，总辐射功率达11.1dBm。

🏷 关键词

📄 原文摘要

Jinchen Wang, Daniel Sheen, Xibi Chen, Steven F. Nagle, Ruonan Han Massachusetts Institute of Technology, Cambridge, MA Terahertz (THz) signal sources and radiators are essential for a variety of future applications, such as high-resolution radar imaging [1], molecular spectroscopy, and clocks [2], as well as high-speed or miniature-platform communications [3]. For over a decade, the growing interest in CMOS-based compact THz radiation sources has been driven by their small form factor and integration with other analog/digital systems. However, the total radiated power of prior CMOS THz sources was still only several mW, not only due to the limited fmax and breakdown voltages of the CMOS transistors, but also due to the inefficient on-chip radiation approaches. Front-side radiation, typically based on a patch antenna implemented using the CMOS BEOL, allows for low-cost packaging and reliable heat dissipation. However, the

👥 作者与机构

Low-Cost, Matching-Sheet-Assisted Radiation Package and, 11.1dBm Total Radiated Power