A 125-to-170GHz Power-Efficient Phase Shifter in SiGe BiCMOS with Outphasing Gain and Phase Corrections

📋 论文概要

本论文提出了一款工作于125至170GHz的功率高效移相器，采用SiGe BiCMOS工艺，通过外相位增益和相位校正技术，解决了亚THz相控阵系统中移相器在高频下的功率和相位精度问题。该移相器适用于接收和发射链路，能保持动态范围并提高输出1dB压缩点。

💡 主要创新点

• 提出了外相位增益和相位校正技术，在125-170GHz频段实现了高精度的相位控制同时保持功率效率。
• 采用SiGe BiCMOS工艺设计，兼顾了高频性能与集成度，覆盖了亚THz频段的关键应用需求。
• 针对收发双端优化，在接收端保持低噪声和高线性度，在发射端提升输出1dB压缩点功率。

🏷 关键词

📄 原文摘要

Advancements in silicon technologies are opening the way to sub-THz phased-array transceivers, enabling high-resolution radar sensors, and wireless communications with a fiber-like transport capacity. Programmable phase shifters (PSs), not yet deeply investigated, are crucial components in such systems. At the RX side, the PS follows a low-noise amplifier (LNA), with both low noise and high linearity being key to maintain the dynamic range. Conversely, on the TX side, the PS drives a power amplifier (PA), and high output power at 1dB gain compression (OP1dB) for the PS is highly desirable to relax PA requirements and improve system efficiency. Most of the PSs in D-band rely on the vector-sum principle, where signals in quadrature are weighted by variable-gain amplifiers (VGAs) and combined to achieve the desired phase shift [1-3]. This architecture grants fine phase resolution, but the need for VGAs with a wide

👥 作者与机构

Lorenzo Piotto, Guglielmo De Filippi, Andrea Mazzanti

University of Pavia, Pavia, Italy