A Dual VDD-Temperature Sensor Employing Sensor Fusion with 2.4°C, 9mV (±3σ) Inaccuracy in 65nm CMOS

📋 论文概要

本文针对现代系统级封装中日益严峻的热管理和电源传递挑战，提出了一种双VDD-温度传感器，采用传感器融合技术同时感知温度和电压，在65nm CMOS工艺中实现了2.4°C的温度精度和9mV的电压精度（±3σ）。该传感器有助于在运行时进行精细的热和电源管理，减少电压保护带。

💡 主要创新点

• 提出了一种传感器融合架构，能够同时测量温度和电源电压，实现高精度的联合感知。
• 通过在65nm CMOS工艺中采用数字辅助校准和信号处理技术，达到了2.4°C和9mV（±3σ）的低误差。

🏷 关键词

📄 原文摘要

escalated thermal and power delivery challenges in modern Systems-in-Package (SiPs) [1]. Increased power density and degraded thermal conductance intensify thermal hotspots. Meanwhile, workload-dependent supply-voltage (Vdd) gradients in increasingly constrained Power Distribution Networks (PDNs) are becoming more pronounced, requiring additional Vdd guardbands. Run-time thermal and power management, required to address these challenges, relies on a systemwide network of temperature sensors (T-Sensors) and DC supply voltage sensors (Vdd-Sensors) with fine spatiotemporal resolution. These sensors need to be compact and readily integrated within their host modules without external voltage or current references. They must also provide measurements of adequate accuracy with sufficiently low latency.

👥 作者与机构

Hikmet Seha Ozturk1, Julian Arenas1, Carlos Tokunaga2, Nasser Kurd2, Visvesh Sathe1

Georgia Institute of Technology, Atlanta, GA 2 Intel, Hillsboro, OR 1 Trends in heterogeneous and 3D chiplet integration have