⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种细粒度时空热分布测量技术,用于16nm CMOS降压转换器和SoC负载电流仿真器,解决了高功率密度单片和异构3D SoC中局部热点对性能和可靠性的瓶颈问题。通过集成温度传感器阵列和负载电流仿真器,实现了对芯片热分布的精确监测和仿真。
Krishnan Ravichandran, James W. Tschanz, Vivek De Intel, Hillsboro, OR Localized hotspots across high-power-density monolithic systems-on-chip (SoCs) and heterogenous 3D SoCs with integrated voltage regulators (IVR) pose major bottlenecks to performance and reliability, especially as demand for compute density across a wide range of applications continues to grow unabated [1-2]. Floating point units and matrix/vector multipliers for AI/ML and other special-purpose accelerators, designed to deliver extreme performance on demand for a variety of workloads, generate localized thermal hotspot profiles at fine granularity that vary across time and workloads [3-4]. This is further aggravated in 3D integration since heat dissipation occurs vertically through the thinner dies to improved thermal interface materials, resulting in larger localized temperature gradients (>10°C) across a few 100µm [5]. Therefore, fine-grained thermal profiling as well
Zakir Ahmed, Suhwan Kim, Charles Augustine, Harish K. Krishnamurthy,