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ISSCC 2026Session 12 · FREQUENCY SYNTHESIZERS AND VCOSAI / ML28nm CMOS

A 10.2-to-16.2GHz Dual-Mode-Transformer-Based Wideband Series-Resonance VCO Achieving >201.1dBc/Hz FoMT at a 10MHz Offset

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📋 论文概要

本文提出一种基于双模变压器磁控技术的28nm CMOS串联谐振VCO,实现了10.2至16.2GHz(45.2%)的宽调谐范围,并在10MHz偏移处获得>201.1dBc/Hz的FoMT和207.7dBc/Hz的FoMAT。通过变压器优化方法,不同模式间相位噪声和FoM变化小于2dB,并集成采样PLL实现<18.1fs的均方根抖动。

💡 主要创新点

核心指标
FoMT > 201.1dBc/Hz @10MHz offset, FoMAT = 207.7dBc/Hz, rms jitter < 18.1fs, FoMJT = -265.8dB
工艺节点
28nm CMOS
重要性
发表年份
ISSCC 2026

🏷 关键词

串联谐振VCO双模变压器宽调谐范围低相位噪声28nm CMOS

📄 原文摘要

Abstract This work presents a 28nm CMOS SR-VCO enabled by a dual-mode transformer with magnetic control, achieving a wide tuning range of 10.2 to 16.2GHz (45.2%) and a high FoMT/FoMAT@10MHz of 201.1/207.7dBc/Hz. A transformer optimization method is introduced to ensure consistent performance across modes, achieving less than 2dB variation in measured PN and FoM at 10MHz. A sampling PLL incorporating the presented SR-VCO demonstrates rms jitter <18.1fs and FoMJT of -265.8dB. While series-resonance voltage-controlled oscillators (SR-VCOs) are gaining increased popularity in the communication systems beyond 5G by virtue of their superior phase-noise (PN) performance, their tuning range (TR) is typically limited to below 20% due to the small on/off capacitance ratio of the switched capacitor array, which restricts multi-band operation. This limitation stems from the need for relatively large MOS switches to ensure

👥 作者与机构

Yang Li, Yanchao Liu, Kaihang Wang, Dong Pu, Xiaohua Yu, Ronghua Ni

Fudan University, Shanghai, China

分类:AI / ML · 年份:ISSCC 2026