THz-TSI: A 0.33pJ/b 264Gb/s Through-Silicon Interconnect Module for 3D Integration Utilizing Terahertz Coupling

📋 论文概要

本文提出一种利用太赫兹耦合的硅通孔互连模块（THz-TSI），用于3D集成，实现了264Gb/s的创纪录数据率和0.33pJ/b的能效。该方案支持双向点对点和广播模式，具有高带宽密度、低成本和高灵活性，可实时调整互连拓扑以降低延迟。

💡 主要创新点

• 首次利用太赫兹耦合实现硅通孔互连，突破传统TSI的带宽和能效瓶颈。
• 支持双向点对点链路和广播模式，且互连拓扑可实时调整以优化延迟。
• 通过太赫兹波实现非接触式耦合，大幅简化3D集成工艺并降低成本。

🏷 关键词

📄 原文摘要

Abstract A through-silicon interconnect module for 3D integration utilizing THz coupling is presented, which achieves a record high data rate of 264Gb/s and efficiency of 0.33pJ/b. Both bidirectional point-to-point link and broadcast mode are successfully demonstrated. This scheme offers highly competitive bandwidth and density with significantly simpler fabrication and lower cost. Furthermore, its high flexibility enables real-time adjustable interconnect topology to effectively reduce latency. The 3D integration technology has been widely recognized as a critical catalyst for highperformance computing (HPC) and artificial intelligence (AI) integrated systems, which enables a 10-to-100x memory bandwidth enhancement through innovations like high bandwidth memory (HBM) [1,2]. In the large language model era, an exponential surge in model parameters is placing an unprecedented demand on interconnect performances

👥 作者与机构

Chen Jiang, Xiaodi Feng, Xiaohan Shen, Chixiao Chen, Qi Liu, Ming Liu, Ningsheng Xu

Fudan University, Shanghai, China