Seungpil Ko2, Jaechul Shim2, Shinhee Han1, Kiseok Suh1, Sohee Hwang1, Hyunchang Lee1, Jonghoon Jung1, Sanghoon Baek1 Samsung Semiconductor, Gyunggido Kiheung, Korea, 2Samsung Semiconductor, Gyunggido Hwasung, Korea 1 Abstract This paper proposes techniques to improve read margin and write performance for an 8nm eMRAM: temperature compensation, resistance-mismatch improvement and margin-verifywrite MVW. These techniques enable 8ns read and 300ns write operations for 283b at a time with a 128Mb density in a temperature range of -40 - 150°C and from a 0.60V supply. A 19.94Mb/mm2 memory macro is implemented and silicon validation shows a massproduction yield is achieved. Embedded non-volatile memories (eNVM) are widely adopted in various applications: such as IoT, AI, and micro controller units (MCU). eNVMs are one of the most essential IPs in system on chip (SoC) implementations. eNVMs act as data loggers and are used for AIweight storage and to store boot code [1]. Spin-transfer-torque m
Hyunjin Shin1, Gyuseong Kang1, Yeseul Kim1, Dohui Kim1, Kyuseong Kim1, Sunkyu Lee1, Hangil Lee1, Sanggyeong Won1, Mijoung Kim1, Jaeho Lee1,