A Fully Integrated Bidirectional 5-Level Isolated DC-DC Converter with 42.5% Efficiency and 170mW/mm2 Transformer Power Density

📋 论文概要

本文提出一种全集成双向5kV隔离DC-DC转换器，采用180nm SOI CMOS工艺和分布式多绕组变压器，通过5电平混合全桥功率级实现波形整形与电流均衡，达到42.5%峰值效率和170mW/mm2变压器功率密度。

💡 主要创新点

• 采用分布式多绕组变压器，最大化利用标准片上金属叠层，提升隔离功率密度。
• 提出5电平混合全桥功率级，实现基波和谐波波形整形与电流均衡，提高效率。

🏷 关键词

📄 原文摘要

Abstract This work presents a bidirectional 5kV-isolated DC-DC converter, fully-integrated in a 180nm SOI CMOS process. The design uses a distributed multi-winding transformer to maximize utilization of the standard on-chip metal stackup. A 5-level hybrid full-bridge power stage allows fundamental and harmonic waveform shaping with current ballasting. The design achieves peak efficiency of 42.5% at over 550mW, for system power density over 69mW/mm2 and transformer power density over 170mW/mm2. Power transfer across a galvanic isolation barrier is critical for safety and reliability in applications such as biomedical implants and isolated gate drivers [1,2]. The key challenges in this area are to achieve high power density with galvanic isolation over 5kV while maximizing power-transfer efficiency. Figure 19.8.1 shows past solutions which use separate transmitter (TX) and receiver (RX) chips and typically a transformer (XFMR)

👥 作者与机构

Kishalay Datta, Yue Wu, Charles Sullivan, Jason Stauth

Dartmouth College, Hanover, NH