⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出了一款采用14nm FinFET工艺的16通道低温CMOS通量控制脉冲发生器ASIC，用于量子比特的精确控制。该芯片在深低温环境下工作，实现了低功耗多通道脉冲生成，解决了量子计算中大规模控制信号生成的挑战。
Daniel Ramirez2, Timothy J. Schmerbeck2, Bryce Snell2, Jeremy Ekman2, Ryan Black2, Mark Yeck1, Tom Haselhorst2, Emma Erickson2, Kevin Demsky2, Christian W. Baks1, Jonathan Kaus2, Andrea Ruffino3, Pier Andrea Francese3, Andy Davies2, Sudipto Chakraborty1, Scott Lekuch1, Brian P. Gaucher1, Bodhisatwa Sadhu1, Scott M. Willenborg2, Daniel J. Friedman1 IBM T. J. Watson Research Center, Yorktown Heights, NY, 2IBM Systems, Rochester, MN, 3IBM Zurich Research Laboratory, Rueschlikon, Switzerland 1 Abstract This work presents a 16-channel flux pulse generator ASIC for qubit control in 14nm FinFET technology consuming < 7mW per channel. Multiple 10b sub-DACs operating at different rates (up to 1GS/s) are used to realize a pulse generator with 14b level resolution and IIR precompensation. A custom SERDES designed for < 1mW power dissipation enables offchip 2Gb/s (up) and 250Mb/s (down) communications. Multi-qubit control is demonstrated,
Kevin Tien1, David J. Frank1, John F. Bulzacchelli1, Pat Rosno2, Daniel Moertl2, John Timmerwilke1, Ari Noori1, Devin Underwood1, Ken Inoue1, Subhajit Ray1,