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ISSCC 2026Session 23 · NEXT-GENERATION OPTICAL TRANSCEIVERSWireline I/OSiGe BiCMOS

A 112Gb/s NRZ Heterodyne Detection 23ns Settled Burst-Mode RX with CD Suppression and Envelope Demodulation for 100G PON

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📋 论文概要

本文提出了一种基于强度调制异质探测的突发模式接收机,采用单边带正交中频生成和包络检测技术增强基带信号完整性和色散容限,并通过预/后解调器环路分离实现并行自动增益控制和自动偏移控制。该接收机在SiGe BiCMOS前端与硅光子PIC共集成,实现了112Gb/s NRZ速率、25.8dBm OMA灵敏度(背靠背)、23ns建立时间,以及在20km标准单模光纤上支持1290/1329nm双波长工作。

💡 主要创新点

核心指标
112Gb/s NRZ,-25.8dBm OMA (B2B),23ns建立时间,-23.7/-22.9dBm OMA over 20km SMF (1290/1329nm)
工艺节点
SiGe BiCMOS
重要性
发表年份
ISSCC 2026

🏷 关键词

异质探测突发模式接收机CD抑制包络解调100G PONSiGe BiCMOS

📄 原文摘要

Abstract This work presents a burst-mode receiver based on an intensity modulation heterodyne detection scheme. SSB quadrature IF generation and envelope detection enhance baseband signal integrity and chromatic dispersion tolerance. Pre/post-demodulator loop separation allows parallel AGC/AOC in burst-mode. The SiGe BiCMOS front-end, co-integrated with an O-band silicon photonic PIC, achieves 112Gb/s NRZ with –25.8dBm OMA (B2B), 23ns settling, and –23.7/–22.9dBm OMA over 20km SMF in 1290/1329nm. With the development of AI infrastructure and 6G communication, the demand for higher data rates in passive optical networks (PONs) is rapidly increasing. While 50G PON has been standardized [1], scaling to 100G PON presents fundamental challenges in transceiver designs, particularly in intensity modulation direct detection (IMDD) links. Conventional approaches using APD and SOA-PIN receivers [2-3] suffer from device gain-bandwidth

👥 作者与机构

Cheng Wang, Ye Gu, Gertjan Coudyzer, Shengpu Niu, Jing Zhang, Xin Yin

imec - Ghent University, Ghent, Belgium

分类:Wireline I/O · 年份:ISSCC 2026