← 返回论文列表 📄 下载原文 PDF  ISSCC 2026 · 25.9
ISSCC 2026Session 25 · HARDWARE SECURITYHardware Security2nm MBCFET

A PVT Variation- and Attack-Tolerant Metastability-Based TRNG Using Binary Search in 2nm

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文提出了一种基于亚稳态的真随机数生成器(TRNG),采用二进制搜索和偏移可调比较器,无需预热时间即可工作。该设计对低频噪声、PVT变化和环境攻击具有鲁棒性,并在2nm MBCFET工艺中实现,以20Mb/s速率运行,能量效率1.8pJ/b。

💡 主要创新点

核心指标
20Mb/s, 1.8pJ/b, 320μm²
工艺节点
2nm MBCFET
重要性
发表年份
ISSCC 2026

🏷 关键词

硬件安全真随机数生成器亚稳态二进制搜索2nm工艺

📄 原文摘要

Abstract This work presents a single source, metastability-based TRNG using binary search with offset-tunable comparator. The proposed TRNG operates without warm-up time and is robust against low-frequency noise, PVT variations and environmental attacks, while its stochastic model is analytically verified. Fabricated in 2nm MBCFET, the prototype occupies 320μm2, operates at 20Mb/s with 1.8pJ/b. The measurement result of 320 chips shows NIST- and AIS-compliant randomness across all PVT corners. It has become difficult to imagine daily life without smart devices, which store our valuable information from personal memories to sensitive financial data. To keep this information secure, these devices heavily rely on cryptographic protocols, for which a true-randomnumber generator (TRNG) is an essential building block. Since the quality and robustness of random numbers dedicate overall system security, reliable TRNG design has become an

👥 作者与机构

Yelim Youn1, Yong Lim1,2, Jongmi Lee1, Dongyeon Hong1, Wan Kim1, Yong-Sik Kwak1, Kyoung-Jun Moon1, Bogyeong Kang1, Sangmin Yoo1

Samsung Electronics, Hwaseong, Korea, 2now with Yonsei University, Seoul, Korea

分类:Hardware Security · 年份:ISSCC 2026