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该论文提出了一种基于改进型Gilbert单元的48-82.5GHz频率倍频器,通过分裂尾跨导并在开关四象限晶体管上并联电容实现AC短路,使DC偏移降低开关占空比,从而提升功率转换增益和效率。该设计在28nm FDSOI CMOS工艺下实现了8.5dBm输出功率和11%的峰值PAE,解决了毫米波VCO相位噪声和调谐范围不足的问题。
Abstract A 48-to-82.5GHz frequency doubler in 28nm FDSOI CMOS using a modified Gilbert cell is presented. The tail transconductors are split and the switching-quad transistors AC-shorted by capacitors. DC offset builds up across the capacitors, reducing the switching-quad duty cycle in steady state. This mechanism enhances power-conversion gain and efficiency. Measurements show 8.5dBm output power at 11% PAE. Despite sustained research, mm-wave CMOS VCOs still struggle to meet the phase-noise and tuning-range requirements of emerging wireless communication systems and radar sensors. As a result, frequency multiplication from a lower-frequency VCO remains the only viable solution for high-performance mm-wave frequency synthesis. In this context, CMOS frequency doublers continue to attract research attention, with several recent works reporting notable performance improvements. the resulting differential IR drop to generate the DC offset, thereby driving iO toward zero
Jismal Jamal1, Lorenzo Piotto2, Federico Vecchi3, Mahmoud M. Pirbazari3, Andrea Mazzanti1
University of Pavia, Pavia, Italy, 2Fondazione Chips-IT, Pavia, Italy, 3STMicroelectronics, Pavia, Italy