Importance of GaN for 5G and Solid-State mm-Wave Circuits of the Future

📋 论文概要

本文综述了GaN技术在5G和未来毫米波固态电路中的重要性，重点分析了Ga-polar面在5G基站中的成功应用以及N-polar面在W波段展现的高功率和高效率优势，指出N-polar GaN可实现更小尺寸和更低成本。

💡 主要创新点

• 提出N-polar GaN在W波段实现了创纪录的功率和效率，优于传统Ga-polar GaN
• 指出N-polar GaN因更高的功率密度可减少功率放大器芯片数量，并因效率提升降低运营成本
• 展望了宽禁带半导体在固态系统和电路中的关键作用，为未来毫米波电路设计提供新方向

🏷 关键词

📄 原文摘要

Abstract GaN has played an important role in both RF and power devices. GaN made the rapid development and deployment of 5G base stations possible with use of its Ga-polar face. Meanwhile, the N-polar face of GaN has shown great promise through current research, with record power and efficiency at W-band. The benefits of N-polar GaN for systems include a smaller size with fewer power amplifier chips combined due to its higher power density, and lower cost of operation with its improved efficiency. Wide-bandgap semiconductors play an important role in solid-state systems and circuits. Due to their large bandgap, these semiconductors, such as GaN and SiC, can handle large breakdown fields enabling power devices that can handle kilovolts[1]–[4]. GaN is a polarized material, which can be used with other III-Nitrides for use in high-electron-mobility transistors (HEMTs) with a formation of a polarization discontinuity-induced twodimensional electron gas (2DEG). These properties combined wit

👥 作者与机构

Umesh K. Mishra, Christopher J. Clymore, Emre Akso, Matthew Guidry

University of California, Santa Barbara, CA