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ISSCC 2026Session 36 · NEURAL AND BIOMEDICAL INTERFACESAI / ML0.18μm CMOS

A 185.6dB-FOMDR 180.3dB-FOMSNDR 10.64-NEF NS-SAR-ADC with Calibration-Free 2nd-Order kT/C-Noise Shaping for Wearable ExG Acquisition

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📋 论文概要

本文提出了一种无校准的二阶kT/C噪声整形的NS-SAR ADC,通过多任务积分器(MTI)和环路动力学同时实现量化噪声和kT/C噪声的二阶整形,适用于可穿戴ExG信号采集。结合相关电平移位(CLS)和输入阻抗提升(ZIN boosting)技术,在0.18μm CMOS工艺下实现了98.3dB SNDR、103.6dB DR、3.49μVrms IRN(1kHz带宽)、168MΩ输入阻抗和6.3μW功耗。

💡 主要创新点

核心指标
98.3dB SNDR, 103.6dB DR @ 1kHz BW
工艺节点
0.18μm CMOS
重要性
发表年份
ISSCC 2026

🏷 关键词

NS-SAR ADCkT/C噪声整形可穿戴ExG无校准高输入阻抗

📄 原文摘要

Abstract To enable high-fidelity wearable ExG acquisition, this paper presents an NS-SAR ADC that performs 2nd-order shaping of both quantization and kT/C noises through a multi-tasking integrator (MTI) and loop dynamics, without calibration. In addition, correlated-level-shifting (CLS) and ZIN-boosting techniques are used to enhance linearity and ZIN, respectively. Fabricated in 0.18µm CMOS, the ADC achieves 98.3dB SNDR, 103.6dB DR, 3.49µVrms IRN over a 1kHz BW, and ZIN of 168M$ while consuming 6.3µW. High-resolution and low-power ExG (ECG, EEG, EMG, and EOG) acquisition systems are essential for emerging wearable healthcare technologies. In wearable environments, motioninduced electrode-skin impedance variation introduces large artifacts. Therefore, these systems must provide a wide input range (IR) exceeding 1Vpp, achieve input-referred noise (IRN) around 3μVrms within a 1kHz bandwidth, and maintain input impedance (ZIN) above

👥 作者与机构

Geunha Kim, Kyuhyeon Park, Minoo Lee, Jeongyoon Wie, Seokhan Jeong, Yeonjae Shin, Kyoungtae Lee, Jong-Hyeok Yoon, Minyoung Song, Junghyup Lee

Daegu Gyeongbuk Institute of Science and Technology, Daegu, Korea

分类:AI / ML · 年份:ISSCC 2026