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ISSCC 2026Session 37 · MEMORY INTERFACEMemory

A 16Gb/s/pin 0.51pJ/b Single-Ended NRZ Transceiver with Distributed Dual-Loop VDDQ-Ripple Compensation and Dynamic Clock Duty-Cycle Calibration for Memory Interfaces

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📋 论文概要

本文提出一种16Gb/s/pin单端NRZ收发器,采用分布式双环补偿(DDLC)抑制VDDQ纹波,并集成动态占空比校准(DDCC)提升时钟鲁棒性。该设计将去耦电容减少91.4%,眼图水平/垂直裕度分别提升61%和36%,适用于高密度存储器接口。

💡 主要创新点

核心指标
16Gb/s/pin, 0.51pJ/b
重要性
发表年份
ISSCC 2026

🏷 关键词

内存接口单端NRZVDDQ纹波补偿动态占空比校准低功耗收发器

📄 原文摘要

*Equally Credited Authors (ECAs) 1 Abstract A 16Gb/s/pin 0.51pJ/b single-ended NRZ transceiver with distributed dual-loop compensation (DDLC) for VDDQ-ripple suppression and dynamic duty-cycle calibration (DDCC) for robust clocking is presented. The DDLC locally regulates VDDQ with a shared low- power LDO, reducing the required decoupling capacitor by 91.4%, while improving horizontal and vertical eye margins by 61% and 36%. Demonstrated on five channels, the proposed DDLC scales naturally to larger DQ counts for high-density memories. As AI and chiplet technologies proliferate, the demand for high efficiency, high density, and high-speed data transmission between processors and memory continues to surge. Advanced packaging technologies such as silicon bridges, interposers, and through-silicon vias (TSVs) mitigate channel loss and ease equalization requirements [1-8]. While these signal integrity (SI) challenges are mitigated, power integrity (PI), impacted by IR drops, is

👥 作者与机构

Yuchen He*1, Yunbin Luo*1, Yunzhengmao Wang*1, Tengyue Yi2, Chen Jiang1, Chixiao Chen1, Qi Liu1, Ming Liu1, Wenning Jiang1

Fudan University, Shanghai, China, 2ZhangJiang Laboratory, Shanghai, China

分类:Memory · 年份:ISSCC 2026