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ISSCC 2026Session 37 · MEMORY INTERFACEMemory40nm CMOS

A 12.8Gb/s Parallel Receiver with a One-Way Self-Training Scheme for Equalizing ISI and Reflections in Multi-Drop Memory Interfaces

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📋 论文概要

本文提出了一种用于多分支存储器接口的单向自训练方案,通过直接从单脉冲响应导出判决反馈均衡器(DFE)系数,无需控制器交互,有效均衡码间干扰(ISI)和反射。该接收器在40nm CMOS工艺下实现8Gb/s/pin速率,总吞吐量102.4Gb/s,在4分支通道中重新打开闭眼,误码率低于10^-12,能效0.64pJ/b,硬件开销仅6.74%。

💡 主要创新点

核心指标
8Gb/s/pin per pin速率, 102.4Gb/s总吞吐量, BER<10^-12, 0.64pJ/b能效
工艺节点
40nm CMOS
重要性
发表年份
ISSCC 2026

🏷 关键词

多分支存储器接口单向自训练判决反馈均衡器码间干扰反射

📄 原文摘要

8Gb/s/pin receiver with a one-way self-training scheme for highlyreflective multi-drop memory interfaces. DFE tap coefficients are directly derived from a single-pulse response, eliminating controller interaction during training. Implemented in 40nm CMOS, the receiver reopens a closed eye in a 4-drop channel at BER < 10-12. Reusing existing circuitry, the design achieves 102.4Gb/s throughput with only a 6.74% hardware overhead and a 0.64pJ/b energy efficiency. AI and data-center applications demand memory systems with both high capacity and unprecedented performance, driving their evolution. Interface topologies evolved into distinct regimes: performance-critical systems such as GDDR and LPDDR utilize point-topoint connections for maximum signal integrity. Even mainstream DRAM, which traditionally

👥 作者与机构

Ji-Won Moon1, Taehyeon Kim1, Minwook Kim1, Hyeonwoo Seong1, Jewon Lee1, Jeongbin Park1, Dongjun Park1, Jaehoon Lee1, Jung-June Park2,

Chiweon Yoon2, Jae-Yoon Sim1, Seon-Kyoo Lee1 Pohang University of Science and Technology, Pohang, Korea, 2Samsung Electronics, Hwaseong, Korea 1 Abstract This paper presents a 12

分类:Memory · 年份:ISSCC 2026