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本文提出了一种基于锗单光子雪崩二极管(Ge-SPAD)的短波红外/近红外直接飞行时间距离传感器,通过可编程宏像素分配和集成直方图处理,实现了26mW超低功耗下的30fps 400×300像素成像,解决了传统dToF传感器功耗高、灵活性差的问题。
Sony Semiconductor Solutions Europe, Trento, Italy, 2Sony Semiconductor Solutions, Atsugi, Japan 1 Abstract This paper presents a 400×300-pixel Ge-SPAD SWIR/NIR sensor enabling very-low-power operation: the flexible macropixel allocation scheme and high-rate multievent time-to-digital converters, combined with up to 100 simultaneous histograms having autoexposure control allows to turn on the sensor only when and where needed, with resilience to DCR. The sensor power consumption is 26mW when operating 500 macropixels of 3×3 SPAD at 30fps. Direct time-of-flight (dTOF) range sensors have reached maturity in the last years, thanks to high-performing and low-noise SPADs while 3D-stacking technology has enabled complex on-chip processing [1-17]. Still, rejection of ambient light remains a challenge, and for wearables such as augmented reality/virtual reality (AR/VR) devices, power consumption of dTOF sensors in the hundreds-mW range is one order of magnitude more
Matteo Perenzoni1, Koichi Okamoto1,2, Fabrizio De Nisi1, Daniele Perenzoni1, Ji Yong Jeong1, Yu Zou1, Hanning Mai1, Gabriele Quarta1,
Francesco Paolo Mattioli Della Rocca1, Yusuke Okamura1,2, Davide Marani1, Michele Brian1, Daniele Giorgetti1, Soichi Ochiai2, Keiji Tatani2, David Stoppa1