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ISSCC 2026Session 8 · DIE-TO-DIE AND HIGH-SPEED ELECTRICAL TRANSCEIVERSWireline I/O3nm

A 32Gb/s 12.35Tb/s/mm2 0.36pJ/b UCIe-Like Die-to-Die Interface Featuring Edge-Triggered Transceivers in 3nm with Active LSI Packaging

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📋 论文概要

本文提出了一种边缘触发收发器(ETT),并集成在主动本地硅互连(aLSI)中,实现了类似UCIe的芯片间互连。该设计在3nm工艺下达到了32Gb/s的数据速率,同时实现了0.36pJ/b的能效和12.35Tb/s/mm²的面积效率,有效解决了高带宽密度和低功耗的芯片互连挑战。

💡 主要创新点

工艺节点
3nm
重要性
发表年份
ISSCC 2026

🏷 关键词

边缘触发收发器UCIeDie-to-Die接口3nm工艺主动本地硅互连

📄 原文摘要

Chin-Hua Wen1, Hsin-Hung Kuo1, Han-Tzung Ke1, Jie-Ren Huang1, Chang-Yi Li1, Sheng-Tsung Lai1, Shu-Chun Yang1, Kuan-Ting Chou1, Pei-Chen Chiou1, Tsung-Hsien Tsai1, Yi-Ting Chen1, Yen-Ming Chen1, Kenny Cheng-Hsiang Hsieh1 TSMC, Hsinchu, Taiwan, 2TSMC, San Jose, CA 1 Abstract This paper presents edge-triggered transceivers (ETT), enabling a 32Gb/s UCIe-like chiplet interconnect when integrated within an active local silicon interconnect (aLSI). The ETT achieves power consumption of 0.07pJ/b and supports compact top-die TX/RX designs while optimizing 0.36pJ/b energy efficiency and 12.35Tb/s/mm2 area bandwidth density. It demonstrates a 32Gb/s die-to-die link at 0.75V with 20.46ps eye width (65% UI) and 530mV eye height across 64 lanes in a 3nm CMOS process. The rapid growth of data-centric computing, fueled by internet traffic, AI, and GPUs/TPUs, is driving demand for high-bandwidth interconnect solutions. Universal Chiplet Interconnect

👥 作者与机构

Wei-Chih Chen1, Mu-Shan Lin1, Chien-Chun Tsai1, Shenggao Li2, Wei-Shuo Lin1, Yu-Jie Huang1, Nai-Chen Cheng1, Yu-Chi Chen1, Wen-Hung Huang1,

分类:Wireline I/O · 年份:ISSCC 2026