ISSCC 2014
Session 14
mm-Wave
A 247-to-263.5GHz VCO with 2.6mW Peak Output Power and 1.14% DC-to-RF Efficiency in 65nm Bulk CMOS
Signal generation at mm-Wave-to-THz frequencies is attractive because of its applications in bio-sensing, spectroscopy, detection of concealed weapons, as well as high-data-rate communication. CMOS is considered a potent
ISSCC 2014
Session 14
mm-Wave
A Scalable THz 2D Phased Array with +17dBm of EIRP at 338GHz in 65nm Bulk CMOS
There is an untapped market for integrated high-resolution imaging and spectroscopy at mm-Wave and THz frequencies. Some novel approaches have been recently proposed to render on-chip signal generation and transmission a
ISSCC 2013
Session 8
mm-Wave
A 260GHz Broadband Source with 1.1mW Continuous-Wave Radiated Power and EIRP of 15.7dBm in 65nm CMOS
Terahertz spectroscopy using silicon technology is gaining attraction for future portable and affordable material identification equipment. To do this, a broadband THz radiation source is critical. Unfortunately, the ban
ISSCC 2012
Session 15
mm-Wave
A 283-to-296GHz VCO with 0.76mW Peak Output Power in 65nm CMOS
Sub-mm-Wave and terahertz frequencies have many applications such as medical imaging, spectroscopy and communication systems. CMOS signal generation at this frequency range is a major challenge due to the limited cut-off
ISSCC 2011
Session 23
Image Sensors
An Angle-Sensitive CMOS Imager for Single-Sensor 3D Photography
Conventional cameras capture 2D photographs at a single plane of focus. Acquisition of a 3D photograph with multiple planes of focus typically requires scanning the focus of a single camera [1], or using arrays of camera
ISSCC 2011
Session 16
mm-Wave
A 220-to-275GHz Traveling-Wave Frequency Doubler with -6.6dBm Power at 244GHz in 65nm CMOS
There is a growing interest in using CMOS technology in the mm-Wave and terahertz frequency ranges for applications such as spectroscopy, imaging, compact range radars, and remote sensing [1]. Tunable signal sources are