Helsinki University of Technology

ISSCC 2010 Session 23 mm-Wave

A W-Band 65nm CMOS Transmitter Front-End with 8GHz IF Bandwidth and 20dB IR-Ratio

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen

The nanoscale era of CMOS technology has enabled the integration of mm-Wave circuits and front-ends at W-band [1,2]. The possible applications range from telecommunications (71 to 76 & 81 to 86GHz) and collision avoidanc

Helsinki University of Technology, Espoo, Finland

ISSCC 2010 Session 17 Sensors

A Closed-Loop SC Interface for a ±1.4g Accelerometer with 0.33% Nonlinearity and 2µg/√Hz Input Noise Density

Mikail Yucetas, Jarno Salomaa, Antti Kalanti, Lasse Aaltonen, Kari Halonen

which allows the resonances of the element to be efficiently damped and permits, for example, an open-loop readout of the element. If the accelerometer is required to attain very low Brownian noise levels or packaged tog

Helsinki University of Technology, Espoo, Finland Capacitive MEMS acce

ISSCC 2009 Session 29 mm-Wave

W-Band CMOS Amplifiers Achieving +10dBm Saturated Output Power and 7.5dB NF

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen

The scaling of CMOS technology has led to development of amplifiers up to 100GHz and even beyond. As the technology enables the integration of many functions on silicon and is suitable for mass production, the cost-effec

Helsinki University of Technology, Espoo, Finland

ISSCC 2009 Session 20 Sensors

An Interface for a 300°/s Capacitive 2-Axis MicroGyroscope with Pseudo-CT Readout

Lasse Aaltonen1, Timo Speeti1, Mikko Saukoski1,2, Kari Halonen1, 1

The widespread use of capacitive MEMS vibratory gyroscopes is powerfully driven by low cost [1]; this is partly determined by factors such as die area and the number of necessary external components. Important properties

Helsinki University of Technology, Espoo, Finland ELMOS Semiconductor,