ISSCC 2026
Session 19
Power Management
A Binary-Weighted Switched-Capacitor Gate Driver IC for Overcoming Trade-offs Between Driving Loss and Delay Time with Gate-Current Feedback Achieving 85% Driving Loss Reduction
Abstract A binary-weighted switched-capacitor gate driver IC achieving up to 85% reduction in driving loss (Edrv) is presented. Four binary-weighted flying capacitors enable nine-level gate-voltage segmentation, enhancin
ISSCC 2026
Session 19
Power Management
A Digital-Feedback Active-Gate-Driver IC for 600A 1200V SiC MOSFETs Supporting High- and Low-Side Drive with Simultaneous dVds/dt Control and Vds Surge Suppression Enabled by Miller Capacitance Calibration
Abstract A digital feedback active gate driver IC applicable to both high- and low-side 600A, 1200V SiC MOSFETs is proposed and demonstrated on the high-side. High-side voltage sensing uses a parasitic Miller capacitance
ISSCC 2020
Session 18
Power Management
A DC to 35MHz Fully Integrated Single-Power-Supply Isolation Amplifier for Current- and Voltage-Sensing Front-Ends of Power Electronics
Increased switching frequency of power devices for power electronics allows for compact and lightweight circuit implementations for variety of applications, including power factor corrections, DC/DC converters, and motor
ISSCC 2019
Session 15
Wireless
A 4.5V/ns Active Slew-Rate-Controlling Gate Driver with Robust Discrete-Time Feedback Technique for 600V Superjunction MOSFETs
Active gate control is an emerging technique to minimize the switching loss of highpower converters facing noise-suppression challenges. In a conventional gate-driver design, a fixed value of gate resistance is chosen by
ISSCC 2016
Session 12
Power Management
A 2-Output Step-Up/Step-Down SwitchedCapacitor DC-DC Converter with 95.8% Peak Efficiency and 0.85-to-3.6V Input Voltage Range
Switched-capacitor (SC) DC-DC converters have gained attention based on their ability to offer a low-cost high-efficiency power conversion, and allow a thin and compact module packaging [1]. However, the SC DC-DC convert
ISSCC 2013
Session 5
RF & Wireless
A 1.8GHz Linear CMOS Power Amplifier with Supply-Path Switching Scheme for WCDMA/LTE Applications
Low-cost CMOS PAs for mobile terminals have been a focus of attention in recent years. Self-contained, linear CMOS PAs are particularly attractive for smooth replacement of conventional compound semiconductor PA products
ISSCC 2012
Session 14
Digital Circuits
A Digitally Stabilized Type-III PLL Using Ring VCO with 1.01psrms Integrated Jitter in 65nm CMOS
control gain, KVCO, increases the phase noise contribution arising from the charge pump and loop filter. To resolve this problem, dual-tuning PLLs (DT-PLLs) have been studied [1-4]. The DT-PLL structure adds a narrow-ban
ISSCC 2011
Session 5
Clocking & PLLs
A 570fsrms Integrated-Jitter Ring-VCO-Based 1.21GHz PLL with Hybrid Loop
Sampling clock jitter significantly degrades the circuit performance and dynamic range of an ADC [1]. This paper presents a 570fsrms integrated-jitter 1.21GHz PLL with a hybrid loop. A ring VCO has a much inferior phase
ISSCC 2011
Session 19
Digital Circuits
A 77% Energy-Saving 22-Transistor Single-PhaseClocking D-Flip-Flop with Adaptive-Coupling Configuration in 40nm CMOS
Flip-flops (FF) typically consume more than 50% of random-logic power in an SoC chip, due to their redundant transition of internal nodes, when the input and the output are in the same state. Several low-power techniques
ISSCC 2011
Session 16
mm-Wave
A 1.5GHz-Modulation-Range 10ms-ModulationPeriod 180kHzrms-Frequency-Error 26MHz-Reference Mixed-Mode FMCW Synthesizer for mm-Wave Radar Application
is one of the promising candidates for realizing a CMOS radar IC [1-3]. Range and velocity resolutions of the FMCW radar are determined by the bandwidth and period of triangular modulation [4]. A short-range measurement
ISSCC 2010
Session 7
Other
A Wafer-Level Heterogeneous Technology Integration for Flexible Pseudo-SoC
implemented for monolithic integrated System on Chip (SoC) by applying the advantages of process compatibility between MEMS and CMOS LSI [1]. However, it has been impossible to integrate them in the case that MEMS and st
ISSCC 2010
Session 3
RF & Wireless
A 10MHz Signal Bandwidth Cartesian-Loop Transmitter Capable of Off-Chip PA Linearization
Recently, signals with high peak-to-average power ratio (PAPR) are being used for metropolitan area networks (MANs) and cellular systems, and therefore highly linear transmitters (Txs) are required. The linearity perform
ISSCC 2010
Session 21
Data Converters
A 0.06mm2 8.9b ENOB 40MS/s Pipelined SAR ADC in 65nm CMOS
In 10b SAR ADCs, one of the major design challenges is the large number of capacitors for implementing the capacitor array. A large unit capacitance should be used due to the design constraint of capacitor mismatches and
ISSCC 2009
Session 19
Analog Circuits
A 90nm CMOS CT BPF for Bluetooth Transceivers with DT 1b-Switched-Resistor Cutoff-Frequency Control
In this paper, a scheme for tuning cutoff-frequency of filters is presented. Instead of using a multibit resistor bank, a 1b switched-resistor structure operating at 200MHz is utilized. The effective RC time constant is
ISSCC 2009
Session 12
RF & Wireless
A 0.6V 380µW -14dBm LO-Input 2.4GHz DoubleBalanced Current-Reusing Single-Gate CMOS Mixer with Cyclic Passive Combiner
A mixer is one of the bottlenecks in achieving the low-voltage operation of a receiver. Most of the mixer topologies recently reported for low-voltage and low-power applications can be categorized into bulk-injection mix