Delft University of Technology

Yonsei University, Seoul, Korea, 3 NXP Semiconductors, Eindhoven, The Netherlands 1 2 This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accura

Jet Propulsion Laboratory, Pasadena, CA 1 2 Raman spectroscopy is a nondestructive, label-free optical analysis technique used to obtain structural and compositional information without any advance preparation. However,

Infineon Technologies, Villach, Austria 1 2 This paper presents a micropower current-sensing system (CSS) for battery monitoring, which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference (

University of Science and Technology of China, Hefei, China 1 2 Frequency synthesis at mm-Waves is still dominated by analog PLLs, although all-digital PLLs (ADPLLs) [1] have been widely explored below 10GHz. The major o

Aktieve Rangschikkings Monolitische Microgolf Onderdelen B.V., Delft, The Netherlands 1 resonance frequency fosc2 to ‘snap’ to it if both are within the locking range [5]. The locking range is wide enough (±5%) due to th

This paper introduces a clock-free self-timed incremental ΔΣ ADC. Unlike conventional ΔΣ ADCs, it does not require a dedicated clock signal, thus saving energy and reducing system complexity. As such, it has similar adva

Capacitively coupled chopper amplifiers are capable of handling common-mode voltages outside their supply rails, while also achieving high power efficiency and low offset [1-3]. However, a significant drawback of such am

Filters are key building blocks in wireless communication and analog signal processing. Typically, Gm-C and active-RC topologies are being used for this purpose. However, reduced supply voltage and lower transistor outpu

Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulkCMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifica

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27n

National Semiconductor, Santa Clara, CA 1 2 Despite the increasing use of ICs at very high temperatures (>150°C) in automotive and industrial applications, sensing such temperatures is still mostly done with discrete the

In precision mechatronic systems, such as wafer steppers, the position of critical mechanical components must be dynamically stabilized with sub-nanometer precision. This can be achieved by a servo loop consisting of a d

Precision thermocouples and bridge transducers such as strain gauges and thermistors require read-out ICs with low noise, high accuracy and low drift. In such applications, the sensor and the read-out IC (ROIC) are usual

Current-feedback instrumentation amplifiers (CFIAs) have significant advantages over the classic three-opamp topology: better power efficiency [1, 2], higher CMRR and rail-sensing capability [4]. Their main disadvantage,

Amplifiers with low offset and low 1/f noise usually employ auto-zeroing (AZ) and/or chopping. However, AZ suffers from noise aliasing, and so requires more power dissipation for a given noise specification. Chopping, al

Most electronic systems require a frequency reference, and so, much research has been devoted to the realization of on-chip frequency references in standard CMOS. However, the accuracy of such references is limited by th

independent tuning of both vertical and horizontal polarizations realized in 65nm bulk CMOS is described in this paper. Phased-array transmitters increase the isotropic radiated power of a stand-alone transmitter over a

based on the thermal diffusivity of silicon. Its digital output is insensitive to both process spread and packaging stress and is a near-linear function of absolute temperature. The sensor’s accuracy is mainly limited by

output power in Fig. 22.4.3. The maximum saturated output power is 11.5dBm, with a peak PAE close to 11% at 9dBm output power. The measured small-signal gain is also slightly higher than given in Fig. 22.4.2 at 58GHz, as

In the precision mechatronics of wafer steppers, thermal expansion is an important source of error. To compensate for this, the temperature of critical mechanical components must be measured with high resolution (<1µK),

This paper describes a CMOS temperature-to-digital converter (TDC) based on thermal diffusivity sensing, which is an interesting alternative to conventional band-gap temperature sensors because the thermal diffusivity of

For power management in mobile systems, the supply current is often measured through a small sense resistor in series with the positive power supply. The voltage across this high-side sense resistor is then amplified and

millimeter-wave frequency operation have been reported recently [1-3]. Potential applications for such silicon ICs include: Gb/s communication (e.g., 60 and 120GHz bands), long-range collision avoidance radar for automob