机构

KU Leuven

22 篇 ISSCC 论文

ISSCC 2020 Session 29 RF & Wireless
A 660-to-676GHz 4×2 Oscillator-Radiator Array with Intrinsic Frequency-Filtering Feedback for Harmonic Power Boost Achieving 7.4dBm EIRP in 40nm CMOS
Gabriel Guimaraes, Patrick Reynaert
The THz region of the electromagnetic spectrum is gaining interest due to its unique spectroscopic properties that make it useful for gas detection, biological imaging, and accurate timekeeping. While several techniques
ISSCC 2020 Session 29 RF & Wireless
A 0.59THz Beam-Steerable Coherent Radiator Array with 1mW Radiated Power and 24.1dBm EIRP in 40nm CMOS
Kaizhe Guo, Patrick Reynaert
In THz imaging systems, signal sources are needed to provide illumination of objects. In several reported imaging systems working at 0.3THz, 0.62THz, and 0.81THz, an output power around 1mW is required to achieve an acce
ISSCC 2020 Session 24 RF & Wireless
A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS
Bart Philippe, Patrick Reynaert
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-band communication. A high level of integration in a nm-CMOS technology is necessary to keep the cost low and allow for efficie
ISSCC 2019 Session 20 Data Converters
A 5GS/s 7.2 ENOB Time-Interleaved VCO-Based ADC Achieving 30.5fJ/conv-step
Maarten Baert, Wim Dehaene
Technology scaling has been very beneficial for digital circuits both in terms of speed and power. Traditional analog techniques however are challenged by the ever-decreasing supply voltages. Highly digital VCO-based ADCs
ISSCC 2018 Session 26 RF & Wireless
A Coupled-RTWO-Based Subharmonic Receiver FrontEnd for 5G E-Band Backhaul Links in 28nm Bulk CMOS
Marco Vigilante, Patrick Reynaert
A fully integrated receiver for high-capacity 5G E-Band Backhaul links (71 to 76GHz and 81 to 86GHz) needs a local-oscillator (LO) distribution network with >19% tuning range (TR) and accurate quadrature phases. Further,
ISSCC 2018 Session 21 Other
Mixed-Signal Programmable Non-Linear Interface for Resource-Efficient Multi-Sensor Analytics
Komail Badami, Juan-Carlos Pena Ramos, Steven Lauwereins, Marian Verhelst
many portable always-awake and multi-sensor systems, the power consumption is dominated by digital backend processing [1] for feature-computation and classification. Recent Analog-to-Information based innovations (see Fi
ISSCC 2017 Session 14 AI / ML
ENVISION: A 0.26-to-10TOPS/W Subword-Parallel Dynamic-Voltage-Accuracy-Frequency-Scalable Convolutional Neural Network Processor in 28nm FDSOI
Bert Moons, Roel Uytterhoeven, Wim Dehaene, Marian Verhelst
ConvNets, or Convolutional Neural Networks (CNN), are state-of-the-art classification algorithms, achieving near-human performance in visual recognition
ISSCC 2017 Session 10 Power Management
A 1.1W/mm2-Power-Density 82%-Efficiency Fully Integrated 3:1 Switched-Capacitor DC-DC Converter in Baseline 28nm CMOS Using Stage Outphasing and Multiphase Soft-Charging
Nicolas Butzen, Michiel Steyaert
Over the past years, delivering power to integrated circuits has become increasingly difficult. With the current intake of many modern-day applications growing each new process generation, the Power Delivery Network (PDN
ISSCC 2016 Session 20 RF & Wireless
A 68.1-to-96.4GHz Variable-Gain Low-Noise Amplifier in 28nm CMOS
Marco Vigilante, Patrick Reynaert
To allow a maximum theoretical data-rate of 25Gb/s over a 1km distance using 64QAM, an E-Band system should feature a 20dBm-output-power TX and an RX with 10dB maximum noise figure (NF) over two bands of 5GHz from 71 to
ISSCC 2016 Session 12 Power Management
A 94.6%-Efficiency Fully Integrated SwitchedCapacitor DC-DC Converter in Baseline 40nm CMOS Using Scalable Parasitic Charge Redistribution
Nicolas Butzen, Michiel Steyaert
In recent years, there has been an ever-increasing interest in monolithic power supplies. Integrating the power supply with the application has many direct benefits, including a reduction of the bill of materials and red
ISSCC 2015 Session 24 Other
Context-Aware Hierarchical Information-Sensing in a 6µW 90nm CMOS Voice Activity Detector
Komail Badami, Steven Lauwereins, Wannes Meert, Marian Verhelst
The rise of always-listening sensors integrated in energy-scarce devices such as watches and remote-controls increases the need for intelligent scalable interfaces. Contemporary sensor interfaces digitize raw sensor data
ISSCC 2015 Session 24 Other
Circuit Challenges from Cryptography
Ingrid Verbauwhede, Josep Balasch, Sujoy Sinha Roy, Anthony Van Herrewege
similar to applications in other fields. We have to worry about comparable optimization goals: area, power, energy, throughput and/or latency. Moore’s law helps to attain these goals. However, it also gives the attackers
ISSCC 2015 Session 10 Wireline I/O
An FSK Plastic Waveguide Communication Link in 40nm CMOS
Wouter Volkaerts, Niels Van Thienen, Patrick Reynaert
Technology scaling has enabled RF-CMOS circuits that operate in the millimeterwave frequency range (30 to 300GHz) where large bandwidths are available. These bandwidths can be exploited to increase data-rates of wireless
ISSCC 2014 Session 3 AI / ML
A Dual-Mode Transformer-Based Doherty LTE Power Amplifier in 40nm CMOS
Ercan Kaymaksut, Patrick Reynaert
Modern high-data-rate communication systems such as LTE use spectrally efficient modulation schemes with a high peak-to-average power ratio (PAPR), placing stringent linearity demands on the RF power amplifiers (PA). The
ISSCC 2014 Session 3 AI / ML
A Transformer-Coupled True-RMS Power Detector in 40nm CMOS
Brecht Francois, Patrick Reynaert
To optimize the power consumption and system performance of battery-supplied devices, it is required to monitor and adjust the transmitted RF power accurately and continuously. This is typically done by an external power
ISSCC 2014 Session 27 Digital Circuits
A 210mV 5MHz Variation-Resilient Near-Threshold JPEG Encoder in 40nm CMOS
Nele Reynders, Wim Dehaene
Operating circuits in the near-threshold region enables large energy savings. However, such circuits also pose many challenges, such as increased delay, unwanted leakage paths and high sensitivity to variations. Working
ISSCC 2014 Session 14 mm-Wave
A Push-Pull mm-Wave Power Amplifier with <0.8° AM-PM Distortion in 40nm CMOS
Shailesh Kulkarni, Patrick Reynaert
Millimeter-Wave standards like IEEE 802.15.3c and the new 802.11ad have classifications of their PHY to support single-carrier mode and more complex OFDM mode (high-speed interface) with high peak-to-average ratio (PAPR)
ISSCC 2014 Session 14 mm-Wave
A 0.9V 20.9dBm 22.3%-PAE E-Band Power Amplifier with Broadband Parallel-Series Power Combiner in 40nm CMOS
Dixian Zhao, Patrick Reynaert
The 71-to-76GHz and 81-to-86GHz bands (known as E-band) exhibit low atmospheric attenuation and are allocated by FCC and CEPT for long-haul transmission. They enable multi-Gb/s fixed-link services such as fiber extension
ISSCC 2012 Session 21 Analog Circuits
On-Chip Gain Reconfigurable 1.2V 24µW Chopping Instrumentation Amplifier with Automatic Resistor Matching in 0.13µm CMOS
Fridolin Michel, Michiel Steyaert
Motivated by low-voltage, low-power and small-size requirements of biomedical and energy scavenging circuits, this work introduces a fully integrated instrumentation amplifier (IA) running at 1.2V with a power consumptio
ISSCC 2011 Session 27 Data Converters
A 1.7mW 11b 1-1-1 MASH ΔΣ Time-to-Digital Converter
Ying Cao1,2, Paul Leroux1,3, Wouter De Cock2, Michiel Steyaert1
SCK-CEN, Mol, Belgium 3 KH Kempen, Geel, Belgium The frequency of the relaxation oscillator can be expressed as IREF/(VREF·2C). By correlating VREF and IREF as VREF = IREF·R, its frequency becomes only dependant on passi
ISSCC 2011 Session 27 Data Converters
A 250mV 7.5µW 61dB SNDR CMOS SC ΔΣ Modulator Using a Near-Threshold-Voltage-Biased CMOS Inverter Technique
Fridolin Michel, Michiel Steyaert
One of the most continuous trends in solid-state circuits is the decrease in power supply as a direct consequence of technology scaling. The fact that Vt does not scale linearly with supply voltage has encouraged several
ISSCC 2011 Session 16 mm-Wave
A 120GHz 10Gb/s Phase-Modulating Transmitter in 65nm LP CMOS
Noël Deferm, Patrick Reynaert
This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter that achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth is available. This allows multi-gigabit-per-