ISSCC 2011
Session 23
Image Sensors
A Sub-Electron Readout Noise CMOS Image Sensor with Pixel-Level Open-Loop Voltage Amplification
CSEM, Zurich, Switzerland, 3 CSEM, Landquart, Switzerland, 4 EPFL, Neuchâtel, Switzerland The conversion factor used to calculate the equivalent noise charge is determined by a photon transfer curve measurement. Investig
ISSCC 2011
Session 23
Image Sensors
A 17.7Mpixel 120fps CMOS Image Sensor with 34.8Gb/s Readout
Hiroyuki Iwaki1, Yuji Gendai1, Hirotaka Murakami1, Kenichi Takamiya2, Hiroshi Shiroshita1, Yoshinori Muramatsu1, Toshihiro Furusawa1 1 Sony, Kanagawa, Japan, Sony LSI Design, Kanagawa, Japan 2 Recently, the demands to ac
ISSCC 2011
Session 23
Image Sensors
An APS-C Format 14b Digital CMOS Image Sensor with a Dynamic Response Pixel
Toshiaki Sato2, Tim Bales3, Katsuyuki Kawamura2, Eduard Pages2, Shinichiro Matsuo2, Tetsuji Kawaguchi2, Tadashi Sugiki2, Norio Yoshimura2, Junichi Nakamura2, John Ladd1, Zhiping Yin1, Russell Iimura1, Xiaofeng Fan1, Scot
ISSCC 2011
Session 23
Image Sensors
An 80µVrms-Temporal-Noise 82dB-Dynamic-Range CMOS Image Sensor with a 13-to-19b VariableResolution Column-Parallel FoldingIntegration/Cyclic ADC
Taishi Takasawa1, Tomoyuki Akahori2, Keigo Isobe2, Takashi Watanabe2, Shinya Itoh1, Shoji Kawahito1,2 1 Shizuoka University, Hamamatsu, Japan, Brookman Technology, Hamamatsu, Japan, 3 Sanei Hytechs, Hamamatsu, Japan 2 Lo
ISSCC 2010
Session 22
Image Sensors
A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS Image Sensor
Souichiro Kuramochi1, Oichi Kumagai1, Seijiro Sakane1, Masamichi Ito1, Masahiro Hatano1, Masaru Kikuchi1, Yuuki Yamagata1, Takeshi Shikanai1, Ken Koseki1, Keiji Mabuchi1, Yasushi Maruyama1, Kentaro Akiyama1, Eiji Miyata2
ISSCC 2010
Session 22
Image Sensors
A 2.2/3-inch 4K2K CMOS Image Sensor Based on Dual Resolution And Exposure Technique
from HD to 4K2K, which will further extend to 8K4K / portable 4K2K. With advancements in device fabrication process technologies, there has been a pressing need for the miniaturization as well as high resolution and high
ISSCC 2010
Session 22
Image Sensors
An 80×60 Range Image Sensor Based on 10µm 50MHz Lock-In Pixels in 0.18µm CMOS
provided by standard digital cameras is often not sufficient to build the sophisticated models required by systems capable of analyzing and interpreting their environment. A three-dimensional (3D) image sensor has great
ISSCC 2010
Session 22
Image Sensors
A 256×256 14k Range Maps/s 3-D Range-Finding Image Sensor Using Row-Parallel Embedded Binary Search Tree and Address Encoder
These days, 3-D information technology is being developed rapidly and has been applied to various fields. Moreover, ultra-fast 3-D range-finding makes way for the possibilities of additional applications such as drop tes
ISSCC 2010
Session 22
Image Sensors
A CMOS Image Sensor for 10Mb/s 70m-Range LEDBased Spatial Optical Communication
recently been of interest in the mobile localarea communication systems, especially in the automotive applications. It has many advantages over the radio communication such as robustness to jamming, human safety due to l
ISSCC 2010
Session 22
Image Sensors
A QVGA 143dB Dynamic Range Asynchronous Address-Event PWM Dynamic Image Sensor with Lossless Pixel-Level Video Compression
Conventional image/video sensors acquire visual information from a scene in time-quantized fashion at some predetermined frame rate. Each frame carries the information from all pixels, regardless of whether or not this i
ISSCC 2010
Session 22
Image Sensors
A 2.7e- Temporal Noise 99.7% Shutter Efficiency 92dB Dynamic Range CMOS Image Sensor with Dual Global Shutter Pixels
A low-noise global shutter CMOS image sensor is a next challenge to expand the market for CMOS image sensors. A low-noise global electronic shutter can be used for various applications such as high-speed imaging, machine
ISSCC 2010
Session 22
Image Sensors
A 1.1e- Temporal Noise 1/3.2-inch 8Mpixel CMOS Image Sensor using Pseudo-Multiple Sampling
Youngkyun Jeong, Seungjin Lee, Hansoo Lee, Sin-Hwan Lim, Yunseok Han, Jinwoo Kim, Jaecheol Yun, Seogheon Ham, Yun-Tae Lee Samsung Electronics, Yongin, Korea The noise performance of CMOS image sensors has improved signif
ISSCC 2010
Session 22
Image Sensors
A 2.1Mpixel 120frame/s CMOS Image Sensor with Column-Parallel ΔΣ ADC Architecture
the demands for high-density and high-speed imaging have increased drastically. Since CMOS image sensors have the advantages of low power consumption and easy system integration, they have become dominant over CCDs in th
ISSCC 2009
Session 2
Image Sensors
A Dual-Conversion-Gain Video Sensor Dewarping and Overlay on a Single Chip with
Aptina Imaging, Bracknell, United Kingdom Aptina Imaging, Corvallis, OR 2 Automotive sensors such as video-reversing cameras demand excellent lowlight performance whilst also being able to handle full sunlight. Furthermo
ISSCC 2009
Session 2
Image Sensors
A Charge-Multiplication CMOS Image Sensor Suitable for Low-Light-Level Imaging
Kazuhiro Suzuki, Toshikazu Ohno, Yugo Nose, Keisuke Watanabe, Tatsushi Ohyama, Kuniyuki Tani Sanyo Electric, Gifu, Japan Charge multiplication using impact ionization [1] was proposed in the 1980s to improve the sensitiv
ISSCC 2009
Session 2
Image Sensors
Paper withdrawn by author 48 • 2009 IEEE International Solid-State Circuits Conference 978-1-4244-3457-2/09/$25.00 ©2009 IEEE ISSCC 2009 / February 9, 2009 / 4:15 PM 2 DIGEST OF TECHNICAL PAPERS • 49
ISSCC 2009
Session 2
Image Sensors
An SoC Combining a 132dB QVGA Pixel Array and a 32b DSP/MCU Processor for Vision Applications
optical front-end, and a data representation that is as independent as possible from the illumination level. Furthermore, combining an optical front-end and a processor on the same chip enables a single-chip vision syste
ISSCC 2009
Session 2
Image Sensors
A 1/2.5-inch 8Mpixel CMOS Image Sensor with a Staggered Shared-Pixel Architecture and an FDBoost Operation
architectures have previously been proposed [1-3]. However, the use of conventional shared-pixel architectures leads to a Gr/Gb sensitivity imbalance because the Gr pixel and the Gb pixel have a different layout structur
ISSCC 2009
Session 2
Image Sensors
A 4-Channel 20-to300 Mpixel/s Analog Front-End with Sampled Thermal Noise Below kT/C for Digital SLR Cameras ply nodes VDD and VSS caused by parasitic inductance, limiting crosstalk. Also, the floating current mirror formed by MN1 and MN2 allows the bias current to be easily optimized by the nonlinear bias generator described earlier.
Analog Devices, Beijing, China With this new reference buffer, measured crosstalk exceeds -85dB. A fullscale step input is applied to the aggressor channel, and other channels are measured with inputs grounded. Channel m
ISSCC 2009
Session 2
Image Sensors
A 4-Side Tileable Back Illuminated 3D-Integrated Mpixel CMOS Image Sensor
Jeffrey Knecht1, Andrew Messier1, Kevin Newcomb1, Dennis Rathman1, Richard Slattery1, Antonio Soares1, Charles Stevenson1, Keith Warner1, Douglas Young1, Lin Ping Ang3, Barmak Mansoorian3, David Shaver1 1 MIT Lincoln Lab
ISSCC 2009
Session 15
Image Sensors
A Digital Driving Technique for an 8b QVGA AMOLED Display Using ∆Σ Modulation
Purdue University, West Lafayette, IN LG Electronics, Seoul, Korea 2 Active-matrix organic LED (AMOLED) is one of the most promising contenders for next-generation displays. However, the VT-shift issue in thin-film trans
ISSCC 2009
Session 15
Image Sensors
A 0.1e- Vertical FPN 4.7e- Read Noise 71dB DR CMOS Image Sensor with 13b Column-Parallel Single-Ended Cyclic ADCs
Tomoyuki Akahori1, Tomohiko Kosugi1, Keigo Isobe1, Yuichi Kaneko1, Zheng Liu1, Kazuki Muramatsu1, Takeshi Matsuyama1, Shoji Kawahito1, 2 1 Brookman Lab, Hamamatsu, Japan, 2Shizuoka University, Hamamatsu, Japan The perfor
ISSCC 2009
Session 15
Image Sensors
A 10b Column Driver with Variable-Current-Control Interpolation for Mobile Active-Matrix LCDs
resistor-string DAC (RDAC) needs to be increased, which results in a large area overhead [1]. To avoid this issue, several DAC architectures such as a CDAC [2] and an embedded DAC [3] have been reported. However, CDACs s
ISSCC 2009
Session 15
Image Sensors
A Piecewise-Linear 10b DAC Architecture with DrainCurrent Modulation for Compact AMLCD Driver ICs
(AMLCD) systems play the key role of data voltage generation. Especially stringent requirements are imposed on the DACs for AMLCD data drivers: uniform performance in each data channel, and compactness in chip implementa
ISSCC 2008
Session 2
Image Sensors
Low-Crosstalk and Low-Dark-Current CMOS Image-Sensor Technology Using a Hole-Based Detector
Jeffery Kyan1, Christopher Parks1, Gang Shi1, Cristian Tivarus1, Jian Wu1 1 Eastman Kodak, Rochester, NY, 2Eastman Kodak, Yokohama, Japan As the pixel size of CMOS image sensors (CIS) shrink, problems associated with cro
ISSCC 2008
Session 2
Image Sensors
A 2Mpixel 1/4-inch CMOS Image Sensor with Enhanced Pixel Architecture for Camera Phones and PC Cameras
Micron, Oslo, Norway, 2Micron, Boise, ID This paper presents performance data for a second-generation, 2Mpixel, 1/4-inch CMOS image sensor with state-of-the-art pixel technology that targets camera phones, PC cameras, PD
ISSCC 2008
Session 2
Image Sensors
A CMOS Image Sensor Integrating ColumnParallel Cyclic ADCs with On-Chip Digital Error Correction Circuits
ADCs with high 14b or more of resolution to obtain sufficient image quality after the data pass through the color processing pipeline. A columnparallel ADC in CMOS image sensors helps to enable high-speed readout of high
ISSCC 2008
Session 2
Image Sensors
A 3.6pW/frame·pixel 1.35V PWM CMOS Imager with Dynamic Pixel Readout and no Static Bias Current
compatible with deep submicron logic circuits enables new imager applications, such as disposable medical cameras and autonomous wireless security cameras on a chip. Pulse width modulation (PWM) [1-2] is promising for th
ISSCC 2008
Session 2
Image Sensors
A White-RGB CFA-Patterned CMOS Image Sensor with Wide Dynamic Range
mobile phone cameras. But, when very small pixel sizes are used, the sensor SNR is limited by photon shot noise. In order to improve the sensor SNR Honda [1] and Luo [2] proposed the use of a sensor with a white (W) pixe
ISSCC 2008
Session 2
Image Sensors
A 140dB-Dynamic-Range MOS Image Sensor with In-Pixel Multiple-Exposure Synthesis
applications. In these applications, a dynamic range of 100dB is generally required, which is far above the dynamic range of conventional image sensors, typically 60dB [1]. Generally, in order to meet the above requireme
ISSCC 2008
Session 2
Image Sensors
A 3MPixel Multi-Aperture Image Sensor with 0.7µm Pixels in 0.11µm CMOS
Conventional image sensors have improved with technology scaling mainly by reducing pixel size to increase spatial resolution [1,2]. As resolution approaches the limits of existing optics, is there much to gain from furt
ISSCC 2008
Session 2
Image Sensors
A 5000S/s Single-Chip Smart Eye-Tracking Sensor
user gazes. Infrared (IR) light is commonly used in an eye tracker because it eliminates the influence of ambient illumination and improves the discrepancy between the pupil and the white area in the eye [1]. With the IR
ISSCC 2008
Session 2
Image Sensors
A CMOS Image Sensor with a Buried-Channel Source Follower
Adri Mierop3, Albert J.P. Theuwissen1, 4 1 Delft University of Technology, Delft, Netherlands Texas Instruments, Erlangen, Germany 3 DALSA Semiconductors, Eindhoven, Netherlands 4 Harvest Imaging, Bree, Belgium 2 This pa
ISSCC 2008
Session 2
Image Sensors
A 128×128 Single-Photon Imager with on-Chip Column-Level 10b Time-to-Digital Converter Array Capable of 97ps Resolution
medical sciences and computer vision, just to name a few. Deep sub-nanosecond timing resolution, in combination with high sensitivity, is becoming increasingly important in a number of imaging methods. Non solid-state de
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