ISSCC 2026
Session 15
Memory
A 350mV Single-Rail SRAM Using a Custom-Logic-Bitcell in 2nm-CMOS-Nanosheet Technology for Mobile and Edge-AI Applications
Abstract This work presents a single-rail, 21.04Mb/mm2 logic-bitcell 2-port SRAM in a 2nm nanosheet technology for CPU, GPU and NPU caches. The implemented xBIT cell in a 2R×1C configuration uses dual BL for balanced NMO
ISSCC 2025
Session 19
Clocking & PLLs
A Fractional-N PLL with 34fsrms Jitter and -255.5dB FoM Based on a Multipath Feedback Technique
modulation schemes, such as 4K-QAM, and impose stringent phase-noise requirements on frequency synthesizers. In the past few years, an increasing number of frac-N PLLs with excellent jitter performance, i.e., sub-100fs,
ISSCC 2023
Session 6
Wireline I/O
A 37.8dB Channel Loss 0.6µs Lock Time CDR with Flash Frequency Acquisition in 5nm FinFET
High-speed SerDes is accompanied by high channel loss. Channel loss is usually compensated by transmitter feed-forward equalization (FFE), receiver continuous time linear equalization (CTLE), and receiver decision-feedba
ISSCC 2023
Session 10
Data Converters
A 1.8GHz 12b Pre-Sampling Pipelined ADC with Reference Buffer and OP Power Relaxations
Direct RF sampling reduces complexity for receiver design. However, SNDR and speed specifications of its ADCs are stringent, which makes the time-interleaved (TI) ADC attractive for the required sampling rate. There is a
ISSCC 2021
Session 27
Data Converters
An 80MHz-BW 640MS/s Time-Interleaved Passive NoiseShaping SAR ADC in 22nm FDSOI Process
*Equally-Credited Authors (ECAs) Recently, both the number of smart devices and the amount of data transfered to and from these devices have grown at unprecedented rates. To provide users with a highquality experience, w
ISSCC 2019
Session 30
Wireline I/O
An 8b Injection-Locked Phase Rotator with Dynamic Multiphase Injection for 28/56/112Gb/s Serdes Application
Growing traffic in data centers imposes multiple challenges on serial link design with higher speed and stringent power requirements. Clocking is one major challenge due to the significant portion of total power that clock
ISSCC 2019
Session 20
Data Converters
A 40MHz-BW 320MS/s Passive Noise-Shaping SAR ADC with Passive Signal-Residue Summation in 14nm FinFET
applications due to their low power and small area. SNR of 60-70dB is necessary to meet the noise budget for the downlink chain in the 802.11 ac/ax standards. Comparator noise and quantization noise are typically the dom
ISSCC 2019
Session 18
Analog Circuits
A -105dBc THD+N (-114dBc HD2) at 2.8VPP Swing and 120dB DR Audio Decoder with Sample-and-Hold Noise Filtering and Poly Resistor Linearization Schemes
Three major design issues that arise for high-fidelity audio decoders are: 1) DAC reference noise limiting achievable SNR [1,2]; 2) THD+N degradation at large output swing [3,4]; and 3) Distortion arising from limited amp
ISSCC 2017
Session 28
Data Converters
A 0.46mW 5MHz-BW 79.7dB-SNDR Noise-Shaping SAR ADC with Dynamic-Amplifier-Based FIR-IIR Filter
The successive approximation register (SAR) ADC is the most energy efficient architecture with moderate conversion rate and resolution. However, its comparator noise limits its resolution without sacrificing power effici
ISSCC 2016
Session 5
Analog Circuits
A 118dB-PSRR 0.00067%(-103.5dB) THD+N and 3.1W Fully Differential Class-D Audio Amplifier with PWM Common-Mode Control
A high power-supply rejection ratio (PSRR) and high-linearity Class-D audio amplifier (CDA) becomes important as the CDA is directly connected to a battery supply for efficiency considerations in mobile phone application
ISSCC 2016
Session 27
Data Converters
An Oversampling SAR ADC with DAC Mismatch Error Shaping Achieving 105dB SFDR and 101dB SNDR over 1kHz BW in 55nm CMOS
The successive-approximation-register (SAR) architecture is well-known for its high power efficiency in medium-resolution A/D conversions. Together with time interleaving, it can challenge the regime of flash ADCs in hig
ISSCC 2016
Session 15
Data Converters
A 160MHz-BW 72dB-DR 40mW Continuous-Time ΔΣ Modulator in 16nm CMOS with Analog ISIReduction Technique
baseband ADC of an LTE-A receiver. To boost user throughput and increase network capacity, CT-DSMs will need to increase signal bandwidth (BW) while maintaining sufficient dynamic range (DR) and good power efficiency. Fo
ISSCC 2015
Session 9
Wireless
An LTE SAW-Less Transmitter Using 33% Duty-Cycle LO Signals for Harmonic Suppression
With limited frequency allocation in the radio spectrum, spectral efficiency has always been the core development of communication systems. To accommodate the increase in demand for wireless data services, RF systems hav
ISSCC 2015
Session 10
Wireline I/O
A Wideband Fractional-N Ring PLL Using a NearGround Pre-Distorted Switched-Capacitor Loop Filter
Ring PLLs play an important role in mobile baseband applications. In cases where fine frequency resolution and low jitter are both needed, wideband fractional-N PLL architectures with quantization noise (Q-noise) cancell
ISSCC 2014
Session 20
Wireless
A Multi-Band Inductor-Less SAW-Less 2G/3G-TDSCDMA Cellular Receiver in 40nm CMOS
evolution of cellular phone networks. New-generation cellular standards use wider channel bandwidth and more sophisticated modulation to obtain higher data-rates. Due to various cellular standards, chip providers are req
ISSCC 2014
Session 15
Digital Circuits
A 2.4GHz ADPLL with Digital-Regulated Supply-Noise-Insensitive and Temperature-Self-Compensated Ring DCO
(RVCOs) ([oscillation frequency change %] / [VDD change %] typically lies in the range from 1 to 2 [1]), an LDO has to provide over 40dB power-supply-rejection ratio (PSRR) to maintain VCO phase noise. However, the volta
ISSCC 2013
Session 23
Clocking & PLLs
A Wideband Fractional-N Ring PLL with FractionalSpur Suppression Using Spectrally Shaped Segmentation
Fractional-N PLLs play an important role in both wireless and wireline circuits. Finer timing resolution is needed to reduce the quantization noise in the phase domain. In conventional designs, a phase interpolator (PI)
ISSCC 2013
Session 21
Power Management
An AC-Coupled Hybrid Envelope Modulator for HSUPA Transmitters with 80% Modulator Efficiency
because of the fundamental correlation between data rate and transmit power. Furthermore, the high peak-to-average power ratio (PAPR) of the modulated signals causes a degradation in PA efficiency, since the supply volta
ISSCC 2013
Session 15
Data Converters
A 28fJ/conv-step CT ΔΣ Modulator with 78dB DR and 18MHz BW in 28nm CMOS Using a Highly Digital Multibit Quantizer
compensation and high-order single-opamp integrators have achieved FoM values well below 100fJ/conv-step [1-3]. With loop-filter power greatly reduced, power dissipation in multibit quantizers becomes especially signific
ISSCC 2012
Session 16
Power Management
Near-Independently Regulated 5-Output Single-Inductor DC-DC Buck Converter Delivering 1.2W/mm2 in 65nm CMOS
For minimizing the power consumption in portable devices, efficient DC-DC converters with a wide range of regulated voltages and currents are needed. Considering the required footprint area, cost, and chip count, integra
ISSCC 2011
Session 5
Clocking & PLLs
An Injection-Locked Ring PLL with Self-Aligned Injection Window
In modern analog front-ends, there is an increasing demand on high- performance analog-to-digital converters (ADCs), which require high sampling frequency and low-jitter sampling clock. This makes low-jitter phase-locked
ISSCC 2010
Session 23
mm-Wave
A 1V 17.9dBm 60GHz Power Amplifier in Standard 65nm CMOS
J. Watson, Yorktown Heights, NY 2 For point-to-point multi-Gb/s applications in mobile devices with single antennas, low-cost, highly integrated solutions are preferred, and CMOS technology is a candidate for mm-Wave SoC
ISSCC 2009
Session 9
Data Converters
A 1.2V 2MHz BW 0.084mm2 CT ∆Σ ADC with -97.7dBc THD and 80dB DR Using Low-latency DEM
Due to their inherent anti-aliasing properties and potential for low-power design, continuous-time (CT) ∆Σ ADCs are an indispensable component in wireless communication systems such as GSM/WCDMA, since a precise sampling