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An 18.5μW/qubit Cryo-CMOS Charge-Readout IC Demonstrating QAM Multiplexing for Spin Qubits

Xiling: Cryo-CMOS 18-bit Dual-DAC Manipulator with 4.6μV Precision and 4.1nV/Hz0.5 Noise Co-Integrated with the Single Electron Transistor at 60mK

A Cryo-BiCMOS Controller for 9Be+-Trapped-Ion-Based Quantum Computers

Skin-Inspired Electronics: An Emerging Sensing and Computing Platform

Reversing Scattering to Perform Deep-Tissue Optical Imaging and the Current Need for a Suitable Optoelectronic Solution Changhuei Yang

p-Circuits: Neither Digital nor Analog

Circuits that Solve Optimization Problems by Exploiting Physics Inequalities

Toward Exponential Growth of Therapeutic Neurotechnology

Extreme Wave-Based Metastructures Nader Engheta

Short-Reach Silicon Photonic Interconnects with Quantum Dot Mode Locked Laser Comb Sources

A 7.6mW IR-UWB Receiver Achieving -13dBm Blocker Resilience with a Linear RF Front-End

A 167μW 71.7dB-SFDR 2.4GHz BLE Receiver Using a Passive

A Passive Crystal-Less Wi-Fi-to-BLE Tag Demonstrating Battery-Free FDD Communication with Smartphones

A 1mm2 Software-Defined Dual-Mode Bluetooth Transceiver with 10dBm Maximum TX Power and -98.2dBm Sensitivity 2.96mW RX Power at 1Mb/s

A 44μW IoT Tag Enabling 1μs Synchronization Accuracy and OFDMA Concurrent Communication with Software-Defined Modulation

A -106.3dB THD+N Feedback-After-LC Class-D Audio Amplifier Employing Current Feedback to Enable 530kHz LC-Filter Cut-Off Frequency

A 121.7dB DR and -109.0dB THD+N Filterless Digital-Input Class-D Amplifier with an HV Multibit IDAC Using Tri-level Output and Employing a Transition-Rate-Balanced Bidirectional RTDEM Scheme

V 988nW Time-Domain Audio Feature Extraction for Keyword Spotting Using Injection-Locked Oscillators

Droplet Microfluidics Co-Designed with Real-Time CMOS Luminescence Sensing and Impedance Spectroscopy of 4nL Droplets at a 67mm/s Velocity

Fully Integrated CMOS Ferrofluidic Biomolecular Processing

A 24V Mini-Coil Magnetic Neural Stimulator with Closed-Loop Deadtime Control and ZCS Control Achieving 99.76% Charge Recovery Efficiency to a short pulse PW1 by comparing it with the comparator’s reference voltage (VREF1). PW1 is then routed to the DT controller, which outputs EN1 and the rising edge of EN2. The falling edge of EN2 is generated by the second pulse generator followed by the ZCS controller.

Environmentally-Friendly Disposable Circuit and Battery System for Reducing Impact of E-Wastes solution ((CH3COO)2Mg) with air (O2). Since a voltage of 10V or higher was required to operate the organic circuit, 12 series-connected cells were fabricated. This battery could maintain the voltage of more than 10V at a current of 100μA for more than 3 hours.

A Miniature Multi-Nuclei NMR/MRI Platform with a High-Voltage SOI ASIC Achieving a 134.4dB Image SNR with a 173×250×103µm3 Resolution

A 9mW Ultrasonic Through Transmission Transceiver for Non-Invasive Intracranial Pressure Sensing

Omnidirectional Magnetoelectric Power Transfer for Miniaturized Biomedical Implants via Active Echo

A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs

A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2

e-Chimera: A Scalable SRAM-Based Ising Macro with Enhanced-Chimera Topology for Solving Combinatorial Optimization Problems Within Memory

LISA: A 576×4 All-in-One Replica-Spins Continuous-Time Latch-Based Ising Computer Using Massively-Parallel Random-Number Generations and Replica Equalizations

Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node

A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture

A 2048×60m4 SRAM Design in Intel 4 with an Around-the-Array Power-Delivery Scheme Using PowerVia

A 0.795fJ/bit Physically-Unclonable Function-Protected TCAM for a Software-Defined Networking Switch the activated cell data are modified by the driver via BL and BLB. To weaken the force of the cell, the supply voltage for the bit cell is isolated from VDD by a PMOS header. In the second cycle, the write driver loads the 0s and the other rows are activated.

Metis AIPU: A 12nm 15TOPS/W 209.6TOPS SoC for Cost- and Energy-Efficient Inference at the Edge

A 3D integrated Prototype System-on-Chip for Augmented Reality Applications Using Face-to-Face Wafer Bonded 7nm Logic at <2μm Pitch with up to 40% Energy Reduction at Iso-Area Footprint The 3D clock forwarding methodology enables extension of the SMEM from 16 to 32MB without expanding the original area footprint (4.6MB/mm2). The SMEM access energy is measured for both top die and bottom die banks to be 1.84 and 1.99pJ/B, respectively, at nominal frequency of 500MHz (Fig. 11.2.3) with 0.15pJ/B attributed to the inter-die access. From post-layout RC extracted simulations, only 0.03pJ/B of the access energy is attributed to the 3D interconnects. While on-die temperatures may be a concern for

AMD InstinctTM MI300 Series Modular Chiplet Package – HPC and AI Accelerator for Exa-Class Systems

A 0.5-to-400MHz Programmable BAW Oscillator with Fractional Output Divider Achieving 4ppm Frequency Stability over Temperature and <95fs Jitter

A 0.954nW 32kHz Crystal Oscillator in 22nm CMOS with Gm-C-Based Current Injection Control

A 16MHz XO with 17.5µs Startup Time Under 104ppm-∆F Injection Using Automatic Phase-Error Correction Technique

A 12/13.56MHz Crystal Oscillator with Binary-Search-Assisted Two-Step Injection Achieving 5.0nJ Startup Energy and 45.8µs Startup Time

A 1.4µW/MHz 100MHz RC Oscillator with ±1030ppm Inaccuracy from -40°C to 85°C After Accelerated Aging for 500 Hours at 125°C

A 0.01mm2 10MHz RC Frequency Reference with a 1-Point On-Chip-Trimmed Inaccuracy of ±0.28% from -45°C to 125°C in 0.18µm CMOS

Bandpass Filter and Oscillator ICs with THD < -140dBc at 10Vppd for Testing High-Resolution ADCs

A Chopper-Stabilized Amplifier with a Relaxed Fill-In Technique and 22.6pA Input Current

The Promise of 2-D Materials for Scaled Digital and Analog Applications

The Tall Thin Molecular Programmer Erik Winfree

Some Recent Progress in Bioelectronics John Rogers

A 0.81mm2 740µW Real-Time Speech Enhancement Processor Using Multiplier-Less PE Arrays for Hearing Aids in 28nm CMOS

DL-VOPU: An Energy-Efficient Domain-Specific Deep-LearningBased Visual Object Processing Unit Supporting Multi-Scale Semantic Feature Extraction for Mobile Object Detection/Tracking Applications

A 28nm 11.2TOPS/W Hardware-Utilization-Aware Neural-Network Accelerator with Dynamic Dataflow